dc.contributor.author | Iqbal, M. Zahir |
dc.contributor.author | Iqbal, Waheed |
dc.contributor.author | Eom, J. |
dc.contributor.author | Ahmad, M. |
dc.contributor.author | Ferrer Anglada, Núria |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Física Aplicada |
dc.date.accessioned | 2012-09-04T16:07:42Z |
dc.date.available | 2012-09-04T16:07:42Z |
dc.date.created | 2012-03-15 |
dc.date.issued | 2012-03-15 |
dc.identifier.citation | Iqbal, M. [et al.]. Capacitive tunnels in single-walled carbon nanotube networks on flexible substrate. "Journal of applied physics", 15 Març 2012, vol. 111, núm. 6, p. 1-4. |
dc.identifier.issn | 0021-8979 |
dc.identifier.uri | http://hdl.handle.net/2117/16425 |
dc.description.abstract | We report the analysis of single-walled carbon nanotube networks, which are expected to be suitable as miniaturized flexible radio frequency RC filters and also have important implications for high frequency devices. The surface morphology obtained by atomic force microscopy shows that most of the growth on polypropylene carbonate substrate is homogeneous. The large value of peak intensity ratio of G and D band in Raman spectra indicates the high purity network. Nyquist plots of carbon nanotube networks on a flexible substrate are close to real circles, indicating that the material is conducting, and suggest a simple equivalent circuit having a resistor in parallel with a capacitor. The Bode plots give the dependence of real and imaginary impedances on frequency. While at high frequency, the impedance decreases, due to generation of capacitance between a single-walled carbon nanotube; at low frequency, it shows the normal behavior, having constant value. The tunnels among different carbon nanotubes are capable of storing electric charge. The accumulative capacitances of tunnels for three varied concentrations are calculated by electrochemical impedance spectroscopy simulations to fit the observed Nyquist plots. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.publisher | American Institute of Physics (AIP) |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Física |
dc.subject.lcsh | Atomic force microscopy |
dc.subject.lcsh | Capacitors |
dc.subject.lcsh | Electric circuits, Equivalent |
dc.subject.lcsh | Raman effect |
dc.subject.lcsh | Thin films |
dc.subject.other | Bode plots |
dc.subject.other | Carbon nanotube network |
dc.subject.other | Flexible radio |
dc.subject.other | Flexible substrate |
dc.subject.other | High frequency |
dc.subject.other | High frequency devices |
dc.subject.other | High purity |
dc.subject.other | Low frequency |
dc.subject.other | Normal behavior |
dc.subject.other | Nyquist plots |
dc.subject.other | Peak intensity ratio |
dc.subject.other | Polypropylene carbonate |
dc.subject.other | RC filter |
dc.subject.other | Single-walled carbon nanotube networks |
dc.title | Capacitive tunnels in single-walled carbon nanotube networks on flexible substrate |
dc.type | Article |
dc.subject.lemac | Microscòpia de força atòmica |
dc.subject.lemac | Condensadors elèctrics |
dc.subject.lemac | Circuits elèctrics |
dc.subject.lemac | Efecte Raman |
dc.subject.lemac | Pel·lícules fines |
dc.contributor.group | Universitat Politècnica de Catalunya. CEMAD - Caracterització Elèctrica de Materials i Dispositius |
dc.identifier.doi | 10.1063/1.3695992 |
dc.relation.publisherversion | http://jap.aip.org/resource/1/japiau/v111/i6/p063712_s1 |
dc.rights.access | Open Access |
local.identifier.drac | 10398487 |
dc.description.version | Postprint (published version) |
local.citation.author | Iqbal, M.; Iqbal, W.; Eom, J.; Ahmad, M.; Ferrer-Anglada, N. |
local.citation.publicationName | Journal of applied physics |
local.citation.volume | 111 |
local.citation.number | 6 |
local.citation.startingPage | 1 |
local.citation.endingPage | 4 |