Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuation
Document typeConference report
PublisherIEEE Press. Institute of Electrical and Electronics Engineers
Rights accessRestricted access - publisher's policy
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is the presence of density variations in CNT growth. These variations are due to the lack of precise control of CNT location during the synthesis and the presence of metallic CNTs (m-CNTs). In this work we analyze the impact of CNT density fluctuations on carbon nanotube field effect transistor (CNFET) performance. A CNFET reliability analysis is also presented because of CNT density variations can cause a complete failure of CNFET.
CitationGarcía, C.; Rubio, J.A. Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuation. A: Mixed Design of Integrated Circuits and Systems. "Proceedings of the 19th International Conference". Warsaw: IEEE Press. Institute of Electrical and Electronics Engineers, 2012, p. 124-129.
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