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Laser processing of Al2O3/a-SiCx:H stacks: a feasible solution for the rear surface of high-efficiency p-type c-Si solar cells
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | Colina, Monica |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | López, Gema |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2012-06-25T14:53:26Z |
dc.date.created | 2012-04-26 |
dc.date.issued | 2012-04-26 |
dc.identifier.citation | Martin, I. [et al.]. Laser processing of Al2O3/a-SiCx:H stacks: a feasible solution for the rear surface of high-efficiency p-type c-Si solar cells. "Progress in photovoltaics", 26 Abril 2012, vol. 20, núm. 4, p. 1-5. |
dc.identifier.issn | 1062-7995 |
dc.identifier.uri | http://hdl.handle.net/2117/16135 |
dc.description.abstract | We explore the potential of laser processing aluminium oxide (Al2O3)/amorphous silicon carbide (a-SiCx:H) stacks to be used at the rear surface of p-type crystalline silicon (c-Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, the dielectric film is locally opened. Simultaneously, part of the aluminium in the Al2O3 film is introduced into the c-Si, creating p+ regions that allow ohmic contacts with low-surface recombination velocities. At optimum pitch, high-efficiency solar cells are achievable for substrates of 0.5–2.5 Ω cm. |
dc.format.extent | 5 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Solar cells. |
dc.title | Laser processing of Al2O3/a-SiCx:H stacks: a feasible solution for the rear surface of high-efficiency p-type c-Si solar cells |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1002/pip.2207 |
dc.description.peerreviewed | Peer Reviewed |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 10508648 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Martin, I.; Ortega, P.; Colina, M.; Orpella, A.; López, G.; Alcubilla, R. |
local.citation.publicationName | Progress in photovoltaics |
local.citation.volume | 20 |
local.citation.number | 4 |
local.citation.startingPage | 1 |
local.citation.endingPage | 5 |
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