Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor
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European Commisision's projectONE-P - Organic Nanomaterials for Electronics and Photonics: Design, Synthesis, Characterization, Processing, Fabrication and Applications (EC-FP7-212311)
Theoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) single crystal organic field-effect transistors. Our work demonstrates that ambipolar behavior is not restricted only to materials possessing a high electron affinity and thus may be a more general phenomenon.
CitationMoreno, C. [et al.]. Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor. "Journal of Material Chemistry", 16 Novembre 2011, vol. 22, p. 345-348.
|10.1039_C1JM15037E.pdf||Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor||366,1Kb||Restricted access|