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dc.contributor.authorRodríguez Montañés, Rosa
dc.contributor.authorArumi Delgado, Daniel
dc.contributor.authorFigueras Pàmies, Joan
dc.contributor.authorCastillo Muñoz, Raul
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2012-01-17T12:01:26Z
dc.date.available2012-01-17T12:01:26Z
dc.date.created2011
dc.date.issued2011
dc.identifier.citationRodríguez-Montañés, R. [et al.]. 8T SRAM Cell with Open Defects under Voltage and Timing Variations. A: Conference on Design of Circuits and Integrated Systems. "DCIS 2011". Albufeira: 2011, p. 155-160.
dc.identifier.urihttp://hdl.handle.net/2117/14597
dc.format.extent6 p.
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.title8T SRAM Cell with Open Defects under Voltage and Timing Variations
dc.typeConference report
dc.subject.lemacMemòria ràpida de treball (Informàtica)
dc.contributor.groupUniversitat Politècnica de Catalunya. QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat
dc.rights.accessOpen Access
local.identifier.drac9368433
dc.description.versionPostprint (published version)
local.citation.authorRodríguez-Montañés, R.; Arumi, D.; Figueras, J.; Castillo, R.
local.citation.contributorConference on Design of Circuits and Integrated Systems
local.citation.pubplaceAlbufeira
local.citation.publicationNameDCIS 2011
local.citation.startingPage155
local.citation.endingPage160


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Except where otherwise noted, content on this work is licensed under a Creative Commons license : Attribution-NonCommercial-NoDerivs 3.0 Spain