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dc.contributor.authorGarcía Almudéver, Carmen
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2012-01-12T18:32:42Z
dc.date.available2012-01-12T18:32:42Z
dc.date.created2011
dc.date.issued2011
dc.identifier.citationGarcía, C.; Rubio, J. Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario. A: IEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems. "Proceedings IEEE Design and Diagnosis of Electronic Circuits and Systems". Cottbus: 2011, p. 249-254.
dc.identifier.isbn978-1-4244-9754-6
dc.identifier.urihttp://hdl.handle.net/2117/14490
dc.description.abstractIn silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. New nanoscale beyond-CMOS devices are being studied such as carbon nanotubes (CNTs). The goal of this paper is to evaluate the parameter variability in Carbon Nanotube Field Effect Transistors (CNFETs) and its potential capability to be a promising alternative to Si-CMOS technology. The impact of the carbon nanotube diameter variations as well as the presence of metallic carbon nanotubes in the transistor are analyzed (device level). This variability model is used to make a comparison between Si-MOSFET and CNFET Static Random Access Memory (SRAM) 6T cells (circuit level).
dc.format.extent6 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject.lcshNanotubes
dc.titleManufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario
dc.typeConference report
dc.subject.lemacNanotubs
dc.subject.lemacNanotubs de carboni
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.identifier.doi10.1109/DDECS.2011.5783088
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/search/srchabstract.jsp?tp=&arnumber=5783088&openedRefinements%3D*%26filter%3DAND%28NOT%284283010803%29%29%26searchField%3DSearch+All%26queryText%3DManufacturing+variability+analysis+in+carbon+nanotube+technology%3A+a+comparison+with+bulk+CMOS+in+6T+SRAM+scenario
dc.rights.accessRestricted access - publisher's policy
drac.iddocument8882879
dc.description.versionPostprint (published version)
upcommons.citation.authorGarcía, C.; Rubio, J.
upcommons.citation.contributorIEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems
upcommons.citation.pubplaceCottbus
upcommons.citation.publishedtrue
upcommons.citation.publicationNameProceedings IEEE Design and Diagnosis of Electronic Circuits and Systems
upcommons.citation.startingPage249
upcommons.citation.endingPage254


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