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dc.contributor.authorGarcía Almudéver, Carmen
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2012-01-12T18:23:46Z
dc.date.available2012-01-12T18:23:46Z
dc.date.created2011
dc.date.issued2011
dc.identifier.citationGarcía, C.; Rubio, J. Carbon nanotube growth process-related variablity in CNFET's. A: IEEE conference in Nanotechnology. "Proceedings IEEE NANO 2011". Portland: IEEE Press. Institute of Electrical and Electronics Engineers, 2011, p. 1084-1087.
dc.identifier.isbn978-1-4398-7142-3
dc.identifier.urihttp://hdl.handle.net/2117/14489
dc.description.abstractIn silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. Novel nanoscale beyond- CMOS devices are being studied such as carbon nanotubes (CNTs). The goal of this paper is to evaluate the parameter variability in Carbon Nanotube Field Effect Transistors (CNFETs) and their potential capability to be a promising alternative to Si-CMOS technology.
dc.format.extent4 p.
dc.language.isoeng
dc.publisherIEEE Press. Institute of Electrical and Electronics Engineers
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject.lcshNanotubes
dc.subject.lcshNanotechnology
dc.titleCarbon nanotube growth process-related variablity in CNFET's
dc.typeConference report
dc.subject.lemacNanotubs
dc.subject.lemacOptoelectrònica -- Materials
dc.subject.lemacNanotubs de carboni
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac8882863
dc.description.versionPostprint (published version)
local.citation.authorGarcía, C.; Rubio, J.
local.citation.contributorIEEE conference in Nanotechnology
local.citation.pubplacePortland
local.citation.publicationNameProceedings IEEE NANO 2011
local.citation.startingPage1084
local.citation.endingPage1087


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