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Impact of positive bias temperature instability (PBTI)

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Article Great Lakes Symposium 2011 (431,1Kb) (Restricted access)   Request copy 

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10.1145/1973009.1973065
 
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Cita com:
hdl:2117/14433

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Aymerich Capdevila, Nivard
Ganapathy, Shrikanth
Rubio Sola, Jose AntonioMés informacióMés informacióMés informació
Canal Corretger, RamonMés informacióMés informacióMés informació
González Colás, Antonio MaríaMés informacióMés informacióMés informació
Document typeConference report
Defense date2011
Rights accessRestricted access - publisher's policy
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
Memory circuits are playing a key role in complex multicore systems with both data and instructions storage and mailbox communication functions. There is a general concern that conventional SRAM cell based on the 6T structure could exhibit serious limitations in future CMOS technologies due to the instability caused by transistor mismatching as well as for leakage consumption reasons. For L1 data caches the new cell 3T1D DRAM is considered a potential candidate to substitute 6T SRAMs. We first evaluate the impact of the positive bias temperature instability, PBTI, on the access and retention time of the 3T1D memory cell implemented with 45 nm technology. Then, we consider all sources of variations and the effect of the degradation caused by the aging of the device on the yield at system level.
CitationAymerich, N. [et al.]. Impact of positive bias temperature instability (PBTI). A: ACM Great Lakes Symposium on VLSI. "Proceedings of the 2011 Great Lakes Symposium on VLSI". Lausanne: 2011, p. 227-282. 
URIhttp://hdl.handle.net/2117/14433
DOI10.1145/1973009.1973065
ISBN978-1-4503-0667-6
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  • HIPICS - High Performance Integrated Circuits and Systems - Ponències/Comunicacions de congressos [144]
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