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dc.contributor.authorGarcía Almudéver, Carmen
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.identifier.citationGarcía, C.; Rubio, J. A comparative variability analysis for CMOS and CNFET 6T SRAM cells. A: IEEE International Midwest Symposium on Circuits and Systems. "International Midwest Symposium on Circuits and Systems (MWSCAS)". 2011, p. 1-4.
dc.description.abstractStatistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), the device variability is also present and is mainly due to imperfections inherent in current carbon nanotube (CNT) growth methods. The goal of this paper is to evaluate the impact of the main sources of variability in conventional MOSFET and CNFET 6T SRAM cells through the consideration of random threshold voltage process variations.
dc.format.extent4 p.
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject.lcshSRAM chips
dc.subject.lcshCarbon nanotubes
dc.titleA comparative variability analysis for CMOS and CNFET 6T SRAM cells
dc.typeConference report
dc.subject.lemacNanotubs de carboni
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
dc.description.versionPostprint (published version)
local.citation.authorGarcía, C.; Rubio, J.
local.citation.contributorIEEE International Midwest Symposium on Circuits and Systems
local.citation.publicationNameInternational Midwest Symposium on Circuits and Systems (MWSCAS)

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