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Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout

dc.contributor.authorBerbel Artal, Néstor
dc.contributor.authorFernández García, Raúl
dc.contributor.authorGil Galí, Ignacio
dc.contributor.authorLi, B.
dc.contributor.authorBoyer, A.
dc.contributor.authorBenDhia, S.
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2011-11-15T18:11:09Z
dc.date.available2011-11-15T18:11:09Z
dc.date.created2011-09-16
dc.date.issued2011-09-16
dc.identifier.citationBerbel, N. [et al.]. Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout. "Microelectronics reliability", 16 Setembre 2011, vol. Volume 51, núm. Issue 9 - 11, p. 1564-1567.
dc.identifier.issn0026-2714
dc.identifier.urihttp://hdl.handle.net/2117/13917
dc.description.abstractIn this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted for each sample. The results show that the model can reproduce the MOSFET behavior under HCI wearout mechanism. Therefore, the impact of HCI on circuits can be analyzed by using the nth power law MOSFET model.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
dc.subject.lcshMetal oxide semiconductor field-effect transistors
dc.subject.lcshElectromagnetism
dc.titleExperimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout
dc.typeArticle
dc.subject.lemacElectromagnetisme
dc.contributor.groupUniversitat Politècnica de Catalunya. (TIEG) - Terrassa Industrial Electronics Group
dc.identifier.doi10.1016/j.microrel.2011.06.041
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S002627141100240X
dc.rights.accessOpen Access
local.identifier.drac8602786
dc.description.versionPostprint (author’s final draft)
local.citation.authorBerbel, N.; Fernandez, R.; Gil, I.; Li, B.; Boyer, A.; BenDhia, S.
local.citation.publicationNameMicroelectronics reliability
local.citation.volumeVolume 51
local.citation.numberIssue 9 - 11
local.citation.startingPage1564
local.citation.endingPage1567


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