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dc.contributor.authorZafoschnig, Lisa
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorMartín García, Isidro
dc.contributor.authorMasmitjà Rusiñol, Gerard
dc.contributor.authorLópez Rodríguez, Gema
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2019-05-23T16:57:32Z
dc.date.issued2018
dc.identifier.citationZafoschnig, L. [et al.]. Electron selective contacts based on Al2O3/TiO2/ZnO stacks for crystalline silicon solar cells. A: European Photovoltaic Solar Energy Conference and Exhibition. "Proceedings of 35th EUPVSEC". 2018, p. 653-656.
dc.identifier.isbn3-936338-50-7
dc.identifier.otherhttps://www.eupvsec-proceedings.com/
dc.identifier.urihttp://hdl.handle.net/2117/133397
dc.description.abstractIn the last years, our research group has focused on the development of Interdigitated Back Contacted (IBC) solar cells based on transition metal oxides. In particular, a very thin Al2O3/TiO2 stack deposited by ALD has demonstrated excellent results. The point of this work is to try to develop a transparent conductive oxide that could be inserted in between the passivating layers and the metal contact in order to improve rear reflector properties. As a good candidate, we focus on Zinc Oxide (ZnO) deposited from DEZ (Ditehylzinc) and water as gas precursors. A deposition rate of 1.76 A/cycle is found for layers deposited at 125 ºC indicating a self-limited reaction, i.e. atomic layer deposition process. This film has an optical band gap of 3.26 eV demonstrating good optical properties to work as a back reflector. Unfortunately, contact quality with these layers is very poor. In order to investigate the origin of such a poor performance, we measure ZnO workfunction by Scanning Kelvin Probe resulting in 4.85 eV. This value suggests that the developed ZnO films could work better in a hole selective contact. To demonstrate this point, contacts on MoOx layers were fabricated leading to reasonable contact resistance values of 43 mohmscm. Passivation properties of these contacts will be addressed in the future in order to consider their introduction into the final IBC solar cell.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject.lcshSolar cells
dc.subject.otherZnO
dc.subject.otherselective contacts
dc.subject.othersurface passivation
dc.subject.otherc-Si.
dc.titleElectron selective contacts based on Al2O3/TiO2/ZnO stacks for crystalline silicon solar cells
dc.typeConference lecture
dc.subject.lemacCèl·lules solars
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac25139371
dc.description.versionPostprint (published version)
dc.relation.projectidinfo:eu-repo/grantAgreement/AEI/2PE/TEC2017-82305-R
dc.relation.projectidinfo:eu-repo/grantAgreement/MINECO/1PE/ENE2016-78933-C4-1-R
dc.date.lift10000-01-01
local.citation.authorZafoschnig, L.; Ortega, P.; Martin, I.; Masmitja, G.; Lopez, G.; Alcubilla, R.
local.citation.contributorEuropean Photovoltaic Solar Energy Conference and Exhibition
local.citation.publicationNameProceedings of 35th EUPVSEC
local.citation.startingPage653
local.citation.endingPage656


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