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dc.contributor.authorRodríguez Martínez, Ángel
dc.contributor.authorVega Bru, Didac
dc.contributor.authorNajar, R.
dc.contributor.authorPina, M.
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2011-09-23T16:12:22Z
dc.date.available2011-09-23T16:12:22Z
dc.date.created2011-07
dc.date.issued2011-07
dc.identifier.citationRodriguez, A. [et al.]. Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power Applications. "IEEE transactions on electron devices", Juliol 2011, vol. 58, núm. 9, p. 3065-3071.
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/2117/13318
dc.description.abstractIn this paper, we study the application of macroporous silicon (MpSi) to the fabrication of transistors: Four different FET transistor structures are proposed using MpSi as the base material. These devices have been studied by simulation, and their characteristics are shown herein. The proposed structures include JFET, MOSFET, and trio de-like devices; in this study, we have considered both vertical and horizontal structures. For the vertical case, the proposed devices use the MpSi tubes to create the channel, filling them with a semiconductor and using the bulk silicon as a cylindrical gate all around. In contrast, for the horizontal transistors, the MpSi structure is used as the channel medium, while the conductor-filled pores serve as the controlling gate, thus obtaining a trio de-like device. The use of MpSi allows one to obtain large transistor arrays of extremely high density, thus obtaining a large amount of parallel devices in a moderate-to-small device area. Even more, pore engineering introduces a degree of freedom in the design of the transistor characteristics. We show that the proposed devices have a low threshold voltage and can support large currents. Finally, the behavior of these structures is studied for different geometries.
dc.format.extent7 p.
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
dc.subject.lcshTransistors
dc.subject.lcshSilicon
dc.titleNovel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power Applications
dc.typeArticle
dc.subject.lemacSilici
dc.subject.lemacTransistors
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1109/TED.2011.2159508
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5959197&tag=1
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac5947234
dc.description.versionPostprint (published version)
local.citation.authorRodriguez, A.; Vega, D.; Najar, R.; Pina, M.
local.citation.publicationNameIEEE transactions on electron devices
local.citation.volume58
local.citation.number9
local.citation.startingPage3065
local.citation.endingPage3071


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