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A simple gate drive for SiC MOSFET with switching transient improvement
| dc.contributor.author | Ghorbani, Hamidreza |
| dc.contributor.author | Sala Caselles, Vicenç |
| dc.contributor.author | Paredes Camacho, Alejandro |
| dc.contributor.author | Romeral Martínez, José Luis |
| dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria de Projectes i de la Construcció |
| dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
| dc.date.accessioned | 2019-05-03T12:59:27Z |
| dc.date.issued | 2017 |
| dc.identifier.citation | Ghorbani, H. [et al.]. A simple gate drive for SiC MOSFET with switching transient improvement. A: IEEE Industry Applications Society Annual Meeting. "2017 IEEE Industry Applications Society Annual Meeting: 1-5 Oct. 2017". Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-6. |
| dc.identifier.isbn | 978-1-5090-4894-6 |
| dc.identifier.uri | http://hdl.handle.net/2117/132621 |
| dc.description.abstract | This paper presents a new active gate drive for SiC MOSFETs switching. The proposed driver is based on feedforward control method. The switch is benefited from a simple and effective analog gate driver (GD). The main achievement of this GD is the transient enhancement with minimum undesirable effect on the switching efficiency. Also, the electromagnetic interference (EMI) as the main threat to the operation of SiC MOSFET is eliminated by this method. The proposed GD has been validated through the simulation and experimental tests. All the evaluation have been carried out in a hard switching condition with high-frequency switching. |
| dc.format.extent | 6 p. |
| dc.language.iso | eng |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
| dc.subject.lcsh | Electromagnetic interference |
| dc.subject.other | Gate driver (GD) |
| dc.subject.other | Electromagnetic interference (EMI) |
| dc.subject.other | SiC MOSFET |
| dc.subject.other | Switching losses |
| dc.title | A simple gate drive for SiC MOSFET with switching transient improvement |
| dc.type | Conference report |
| dc.subject.lemac | Electrònica -- Interferències |
| dc.contributor.group | Universitat Politècnica de Catalunya. MCIA - Motion Control and Industrial Applications Research Group |
| dc.identifier.doi | 10.1109/IAS.2017.8101762 |
| dc.description.peerreviewed | Peer Reviewed |
| dc.relation.publisherversion | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8101762&isnumber=8101679 |
| dc.rights.access | Restricted access - publisher's policy |
| local.identifier.drac | 23240504 |
| dc.description.version | Postprint (published version) |
| dc.date.lift | 10000-01-01 |
| local.citation.author | Ghorbani, H.; Sala, V.; Paredes, A.; Romeral, L. |
| local.citation.contributor | IEEE Industry Applications Society Annual Meeting |
| local.citation.publicationName | 2017 IEEE Industry Applications Society Annual Meeting: 1-5 Oct. 2017 |
| local.citation.startingPage | 1 |
| local.citation.endingPage | 6 |