A simple gate drive for SiC MOSFET with switching transient improvement
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
This paper presents a new active gate drive for SiC MOSFETs switching. The proposed driver is based on feedforward control method. The switch is benefited from a simple and effective analog gate driver (GD). The main achievement of this GD is the transient enhancement with minimum undesirable effect on the switching efficiency. Also, the electromagnetic interference (EMI) as the main threat to the operation of SiC MOSFET is eliminated by this method. The proposed GD has been validated through the simulation and experimental tests. All the evaluation have been carried out in a hard switching condition with high-frequency switching.
CitationGhorbani, H. [et al.]. A simple gate drive for SiC MOSFET with switching transient improvement. A: IEEE Industry Applications Society Annual Meeting. "2017 IEEE Industry Applications Society Annual Meeting: 1-5 Oct. 2017". Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-6.