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dc.contributor.authorBanerji, Saoni
dc.contributor.authorFernández, Daniel
dc.contributor.authorMadrenas Boadas, Jordi
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2019-03-28T15:39:23Z
dc.date.available2019-03-28T15:39:23Z
dc.date.issued2018-01-24
dc.identifier.citationBanerji, S.; Fernández, D.; Madrenas, J. A comprehensive high-level model for CMOS-MEMS resonators. "IEEE sensors journal", 24 Gener 2018, vol. 18, núm. 7, p. 2632-2640.
dc.identifier.issn1530-437X
dc.identifier.urihttp://hdl.handle.net/2117/130997
dc.description2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.description.abstractThis paper presents a behavioral modeling technique for CMOS microelectromechanical systems (MEMS) microresonators that enables simulation of an MEMS resonator model in Analog Hardware Description Language format within a system-level circuit simulation. A 100-kHz CMOS-MEMS resonant pressure sensor has been modeled into Verilog-A code and successfully simulated within Cadence framework. Analysis has shown that simulation results of the reported model are in agreement with the device characterization results. As an application of the proposed methodology, simulation and results of the model together with an integrated monolithic low-noise amplifier is exemplified for detecting the position change of the resonator.
dc.format.extent9 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors
dc.subject.lcshIntegrated circuits
dc.subject.lcshDetectors
dc.subject.otherCo-simulation
dc.subject.otherCMOS-MEMS
dc.subject.otherMicroresonators
dc.subject.otherBehavioral modeling
dc.subject.otherAHDL
dc.titleA comprehensive high-level model for CMOS-MEMS resonators
dc.typeArticle
dc.subject.lemacCircuits integrats
dc.subject.lemacDetectors
dc.contributor.groupUniversitat Politècnica de Catalunya. ISSET - Integrated Smart Sensors and Health Technologies
dc.identifier.doi10.1109/JSEN.2018.2797526
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/8268083/
dc.rights.accessOpen Access
local.identifier.drac22322761
dc.description.versionPostprint (author's final draft)
dc.relation.projectidinfo:eu-repo/grantAgreement/MINECO//TEC2015-67278-R/ES/MULTI-MEMS SINERGICOS Y EFICIENTES INTEGRADOS EN CMOS PARA LA INTERNET DE LAS COSAS/
local.citation.authorBanerji, S.; Fernández, D.; Madrenas, J.
local.citation.publicationNameIEEE sensors journal
local.citation.volume18
local.citation.number7
local.citation.startingPage2632
local.citation.endingPage2640


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