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A comprehensive high-level model for CMOS-MEMS resonators

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10.1109/JSEN.2018.2797526
 
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hdl:2117/130997

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Banerji, Saoni
Fernández, Daniel
Madrenas Boadas, JordiMés informacióMés informacióMés informació
Document typeArticle
Defense date2018-01-24
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
ProjectMULTI-MEMS SINERGICOS Y EFICIENTES INTEGRADOS EN CMOS PARA LA INTERNET DE LAS COSAS (MINECO-TEC2015-67278-R)
Abstract
This paper presents a behavioral modeling technique for CMOS microelectromechanical systems (MEMS) microresonators that enables simulation of an MEMS resonator model in Analog Hardware Description Language format within a system-level circuit simulation. A 100-kHz CMOS-MEMS resonant pressure sensor has been modeled into Verilog-A code and successfully simulated within Cadence framework. Analysis has shown that simulation results of the reported model are in agreement with the device characterization results. As an application of the proposed methodology, simulation and results of the model together with an integrated monolithic low-noise amplifier is exemplified for detecting the position change of the resonator.
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2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
CitationBanerji, S.; Fernández, D.; Madrenas, J. A comprehensive high-level model for CMOS-MEMS resonators. "IEEE sensors journal", 24 Gener 2018, vol. 18, núm. 7, p. 2632-2640. 
URIhttp://hdl.handle.net/2117/130997
DOI10.1109/JSEN.2018.2797526
ISSN1530-437X
Publisher versionhttps://ieeexplore.ieee.org/document/8268083/
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  • Departament d'Enginyeria Electrònica - Articles de revista [1.658]
  • ISSET - Integrated Smart Sensors and Health Technologies - Articles de revista [23]
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