A comprehensive high-level model for CMOS-MEMS resonators
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This paper presents a behavioral modeling technique for CMOS microelectromechanical systems (MEMS) microresonators that enables simulation of an MEMS resonator model in Analog Hardware Description Language format within a system-level circuit simulation. A 100-kHz CMOS-MEMS resonant pressure sensor has been modeled into Verilog-A code and successfully simulated within Cadence framework. Analysis has shown that simulation results of the reported model are in agreement with the device characterization results. As an application of the proposed methodology, simulation and results of the model together with an integrated monolithic low-noise amplifier is exemplified for detecting the position change of the resonator.
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CitationBanerji, S.; Fernández, D.; Madrenas, J. A comprehensive high-level model for CMOS-MEMS resonators. "IEEE sensors journal", 24 Gener 2018, vol. 18, núm. 7, p. 2632-2640.
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