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dc.contributor.authorPallarès Marzal, Josep
dc.contributor.authorMarsal Garví, Lluís Francesc
dc.contributor.authorCorreig, Xavier
dc.contributor.authorCalderer Cardona, Josep
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2019-03-27T17:57:45Z
dc.date.issued1997-01
dc.identifier.citationPallarès, J. [et al.]. Space charge recombination in p-n junctions with a discrete and continous trap distribution. "Solid-state electronics", Gener 1997, vol. 41, núm. 1, p. 17-23.
dc.identifier.issn0038-1101
dc.identifier.urihttp://hdl.handle.net/2117/130962
dc.description.abstractSpace charge Shockley-Read-Hall recombination currents in the presence of discrete or continuous distributions of recombination centres are analysed. For a single level trap, depending on its position inside the forbidden band, asymptotic values both for the ideality factor of the current-voltage characteristic and for the activation energy of the saturation current are obtained. The analysis is extended to continuous trap distributions and the current-voltage characteristics obtained are explained in terms of the simple theory developed for single level traps.
dc.format.extent7 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subjectÀrees temàtiques de la UPC::Enginyeria elèctrica
dc.subject.lcshSemiconductors
dc.titleSpace charge recombination in p-n junctions with a discrete and continous trap distribution
dc.typeArticle
dc.subject.lemacSemiconductors
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/S0038-1101(96)00140-2
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S0038110196001402
dc.rights.accessRestricted access - publisher's policy
drac.iddocument755617
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
upcommons.citation.authorPallarès, J.; Marsal, L.F.; Correig, X.; Calderer, J.; Alcubilla, R.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameSolid-state electronics
upcommons.citation.volume41
upcommons.citation.number1
upcommons.citation.startingPage17
upcommons.citation.endingPage23


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