Space charge recombination in p-n junctions with a discrete and continous trap distribution

Abstract

Space charge Shockley-Read-Hall recombination currents in the presence of discrete or continuous distributions of recombination centres are analysed. For a single level trap, depending on its position inside the forbidden band, asymptotic values both for the ideality factor of the current-voltage characteristic and for the activation energy of the saturation current are obtained. The analysis is extended to continuous trap distributions and the current-voltage characteristics obtained are explained in terms of the simple theory developed for single level traps.