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dc.contributor.authorMarsal Amenós, Félix
dc.contributor.authorPallarés Viña, Miguel Juan
dc.contributor.authorCorreig Blanchar, Francesc Xavier
dc.contributor.authorDomínguez Pumar, Manuel
dc.contributor.authorBardés Llorensí, Daniel
dc.contributor.authorCalderer Cardona, Josep
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2019-03-21T18:59:42Z
dc.date.issued1997-08
dc.identifier.citationMarsal, F. [et al.]. Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions. "Diamond and related materials", Agost 1997, vol. 6, núm. 10, p. 1555-1558.
dc.identifier.issn0925-9635
dc.identifier.urihttp://hdl.handle.net/2117/130752
dc.description.abstractHeterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous silicon carbide on p-type crystalline silicon are analysed by measuring their current-voltage characteristics. Two carrier transport mechanisms are believed to be at the origin of the forward current. At low bias voltage, the current is due to recombination in the amorphous side of the space charge region, while at higher voltages, the current becomes space charge limited. At reverse bias, the current can be explained by tunnelling models. The space charge limited currents in these heterojunctions have been used to determine the density of states in the n-type a-Si1 - xCx:H gap. The results show the increase in localized states when approaching the conduction band edge.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject.lcshAmorphous semiconductors
dc.subject.otherAmorphous silicon-carbon alloys
dc.subject.otherDensity of states
dc.subject.otherHeterojunction
dc.subject.otherSpace-charge limited current
dc.subject.otherTransport mechanisms
dc.titleElectrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions
dc.typeArticle
dc.subject.lemacSemiconductors amorfs
dc.contributor.groupUniversitat Politècnica de Catalunya. SPPT - Superfícies, Productes i Processos Tèxtils
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/S0925-9635(97)00054-X
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S092596359700054X
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac755636
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorMarsal, F.; Pallares, M.; Correig, F.; Dominguez, M.; Bardes, D.; Calderer, J.; Alcubilla, R.
local.citation.publicationNameDiamond and related materials
local.citation.volume6
local.citation.number10
local.citation.startingPage1555
local.citation.endingPage1558


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