Mostra el registre d'ítem simple
Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions
dc.contributor.author | Marsal Amenós, Félix |
dc.contributor.author | Pallarés Viña, Miguel Juan |
dc.contributor.author | Correig Blanchar, Francesc Xavier |
dc.contributor.author | Domínguez Pumar, Manuel |
dc.contributor.author | Bardés Llorensí, Daniel |
dc.contributor.author | Calderer Cardona, Josep |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2019-03-21T18:59:42Z |
dc.date.issued | 1997-08 |
dc.identifier.citation | Marsal, F. [et al.]. Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions. "Diamond and related materials", Agost 1997, vol. 6, núm. 10, p. 1555-1558. |
dc.identifier.issn | 0925-9635 |
dc.identifier.uri | http://hdl.handle.net/2117/130752 |
dc.description.abstract | Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous silicon carbide on p-type crystalline silicon are analysed by measuring their current-voltage characteristics. Two carrier transport mechanisms are believed to be at the origin of the forward current. At low bias voltage, the current is due to recombination in the amorphous side of the space charge region, while at higher voltages, the current becomes space charge limited. At reverse bias, the current can be explained by tunnelling models. The space charge limited currents in these heterojunctions have been used to determine the density of states in the n-type a-Si1 - xCx:H gap. The results show the increase in localized states when approaching the conduction band edge. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
dc.subject.lcsh | Amorphous semiconductors |
dc.subject.other | Amorphous silicon-carbon alloys |
dc.subject.other | Density of states |
dc.subject.other | Heterojunction |
dc.subject.other | Space-charge limited current |
dc.subject.other | Transport mechanisms |
dc.title | Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions |
dc.type | Article |
dc.subject.lemac | Semiconductors amorfs |
dc.contributor.group | Universitat Politècnica de Catalunya. SPPT - Superfícies, Productes i Processos Tèxtils |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/S0925-9635(97)00054-X |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://www.sciencedirect.com/science/article/pii/S092596359700054X |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 755636 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Marsal, F.; Pallares, M.; Correig, F.; Dominguez, M.; Bardes, D.; Calderer, J.; Alcubilla, R. |
local.citation.publicationName | Diamond and related materials |
local.citation.volume | 6 |
local.citation.number | 10 |
local.citation.startingPage | 1555 |
local.citation.endingPage | 1558 |
Fitxers d'aquest items
Aquest ítem apareix a les col·leccions següents
-
Articles de revista [346]
-
Articles de revista [52]
-
Articles de revista [1.713]