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Distribution of recombination currents in the space charge of heterostructure bipolar devices
dc.contributor.author | Pallares, J |
dc.contributor.author | Marsal, L F |
dc.contributor.author | Correig, X |
dc.contributor.author | Calderer Cardona, Josep |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2019-03-21T18:54:34Z |
dc.date.available | 2019-03-21T18:54:34Z |
dc.date.issued | 1998-01 |
dc.identifier.citation | Pallares, J. [et al.]. Distribution of recombination currents in the space charge of heterostructure bipolar devices. "IEEE transactions on electron devices", Gener 1998, vol. 45, núm. 1, p. 54-61. |
dc.identifier.issn | 0018-9383 |
dc.identifier.uri | http://hdl.handle.net/2117/130751 |
dc.description.abstract | This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The approach is based on the drift-diffusion model with a thermionic-field emission boundary condition. The main physical parameters which determine the relative contribution of each zone of the space charge region (SCR) to the total recombination current are identified. The general analysis is applied for the first time to amorphous/crystalline heterojunctions and design criteria are established to minimize the total recombination current. |
dc.format.extent | 8 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
dc.subject.lcsh | Amorphous semiconductors |
dc.subject.other | Electron-hole recombination |
dc.subject.other | Space-charge-limited conduction |
dc.subject.other | Heterojunction bipolar transistors |
dc.subject.other | Semiconductor device models |
dc.subject.other | Electron field emission |
dc.title | Distribution of recombination currents in the space charge of heterostructure bipolar devices |
dc.type | Article |
dc.subject.lemac | Semiconductors amorfs |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1109/16.658811 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://ieeexplore.ieee.org/document/658811 |
dc.rights.access | Open Access |
local.identifier.drac | 755625 |
dc.description.version | Postprint (published version) |
local.citation.author | Pallares, J.; Marsal, L.; Correig, X.; Calderer, J.; Alcubilla, R. |
local.citation.publicationName | IEEE transactions on electron devices |
local.citation.volume | 45 |
local.citation.number | 1 |
local.citation.startingPage | 54 |
local.citation.endingPage | 61 |
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