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dc.contributor.authorPallares, J
dc.contributor.authorMarsal, L F
dc.contributor.authorCorreig, X
dc.contributor.authorCalderer Cardona, Josep
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2019-03-21T18:54:34Z
dc.date.available2019-03-21T18:54:34Z
dc.date.issued1998-01
dc.identifier.citationPallares, J. [et al.]. Distribution of recombination currents in the space charge of heterostructure bipolar devices. "IEEE transactions on electron devices", Gener 1998, vol. 45, núm. 1, p. 54-61.
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/2117/130751
dc.description.abstractThis paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The approach is based on the drift-diffusion model with a thermionic-field emission boundary condition. The main physical parameters which determine the relative contribution of each zone of the space charge region (SCR) to the total recombination current are identified. The general analysis is applied for the first time to amorphous/crystalline heterojunctions and design criteria are established to minimize the total recombination current.
dc.format.extent8 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject.lcshAmorphous semiconductors
dc.subject.otherElectron-hole recombination
dc.subject.otherSpace-charge-limited conduction
dc.subject.otherHeterojunction bipolar transistors
dc.subject.otherSemiconductor device models
dc.subject.otherElectron field emission
dc.titleDistribution of recombination currents in the space charge of heterostructure bipolar devices
dc.typeArticle
dc.subject.lemacSemiconductors amorfs
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1109/16.658811
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/658811
dc.rights.accessOpen Access
local.identifier.drac755625
dc.description.versionPostprint (published version)
local.citation.authorPallares, J.; Marsal, L.; Correig, X.; Calderer, J.; Alcubilla, R.
local.citation.publicationNameIEEE transactions on electron devices
local.citation.volume45
local.citation.number1
local.citation.startingPage54
local.citation.endingPage61


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