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dc.contributor.authorMarsal, L F
dc.contributor.authorPallares, J
dc.contributor.authorCorreig, X
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorBardés Llorensí, Daniel
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.identifier.citationMarsal, L. [et al.]. Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations. "Journal of applied physics", Gener 1999, vol. 85, núm. 2, p. 1216-1221.
dc.description.abstractWe fabricated and characterized annealed n-type amorphous Si1-xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA~1016,¿1018, and 1020¿cm-3. The conduction mechanisms were determined by analyzing the temperature dependence of the current–voltage characteristics. The results show that the diodes with low doping concentrations (1016¿cm-3) are ideal, because the phosphorous slightly diffuses into the crystalline silicon, whereas diodes with higher doping concentrations (1018–1020¿cm-3) are dominated by multitunneling capture emission. The increase in the base acceptor doping concentration also causes excess current over the ideal diode current at low forward bias and an increase in the leakage reverse current.
dc.format.extent6 p.
dc.publisherAmerican Institute of Physics (AIP)
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject.lcshSolar cells
dc.subject.otherSolar cells
dc.subject.otherI-V characteristics
dc.titleAnalysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations
dc.subject.lemacCèl·lules solars
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
dc.description.versionPostprint (published version)
local.citation.authorMarsal, L.; Pallares, J.; Correig, X.; Orpella, A.; Bardes, D.; Alcubilla, R.
local.citation.publicationNameJournal of applied physics

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