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Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations
dc.contributor.author | Marsal, L F |
dc.contributor.author | Pallares, J |
dc.contributor.author | Correig, X |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Bardés Llorensí, Daniel |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2019-03-21T18:42:17Z |
dc.date.issued | 1999-01 |
dc.identifier.citation | Marsal, L. [et al.]. Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations. "Journal of applied physics", Gener 1999, vol. 85, núm. 2, p. 1216-1221. |
dc.identifier.issn | 0021-8979 |
dc.identifier.uri | http://hdl.handle.net/2117/130750 |
dc.description.abstract | We fabricated and characterized annealed n-type amorphous Si1-xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA~1016,¿1018, and 1020¿cm-3. The conduction mechanisms were determined by analyzing the temperature dependence of the current–voltage characteristics. The results show that the diodes with low doping concentrations (1016¿cm-3) are ideal, because the phosphorous slightly diffuses into the crystalline silicon, whereas diodes with higher doping concentrations (1018–1020¿cm-3) are dominated by multitunneling capture emission. The increase in the base acceptor doping concentration also causes excess current over the ideal diode current at low forward bias and an increase in the leakage reverse current. |
dc.format.extent | 6 p. |
dc.language.iso | eng |
dc.publisher | American Institute of Physics (AIP) |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Solar cells |
dc.subject.other | Solar cells |
dc.subject.other | I-V characteristics |
dc.subject.other | Heterostructures |
dc.title | Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1063/1.369344 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://aip.scitation.org/doi/10.1063/1.369344 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 763350 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Marsal, L.; Pallares, J.; Correig, X.; Orpella, A.; Bardes, D.; Alcubilla, R. |
local.citation.publicationName | Journal of applied physics |
local.citation.volume | 85 |
local.citation.number | 2 |
local.citation.startingPage | 1216 |
local.citation.endingPage | 1221 |
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