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dc.contributor.authorOrpella García, Alberto
dc.contributor.authorBardés Llorensí, Daniel
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.authorMarsal, L F
dc.contributor.authorPallarès Marzal, Josep
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2019-03-21T18:37:58Z
dc.date.available2019-03-21T18:37:58Z
dc.date.issued1999-11
dc.identifier.citationOrpella, A. [et al.]. In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors. "IEEE electron device letters", Novembre 1999, vol. 20, núm. 11, p. 592-594.
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/2117/130749
dc.description.abstractThe fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type of structure. The high values obtained for G/sub E/ are believed to be due to the valance band discontinuity between the Si/sub 0.8/C/sub 0.2/ layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter.
dc.format.extent3 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
dc.subject.lcshTransistors
dc.subject.otherSilicon compounds
dc.subject.otherAmorphous semiconductors
dc.subject.otherBipolar transistors
dc.subject.otherIon implantation
dc.subject.otherAnnealing
dc.subject.otherSemiconductor device measurement
dc.subject.otherValence bands
dc.subject.otherMinority carriers
dc.subject.otherCurrent density
dc.titleIn-situ doped amorphous Si0.8C0.2 emitter bipolar transistors
dc.typeArticle
dc.subject.lemacTransistors
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1109/55.798054
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/798054
dc.rights.accessOpen Access
drac.iddocument763362
dc.description.versionPostprint (published version)
upcommons.citation.authorOrpella, A.; Bardes, D.; Alcubilla, R.; Marsal, L.; Pallarès, J.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameIEEE electron device letters
upcommons.citation.volume20
upcommons.citation.number11
upcommons.citation.startingPage592
upcommons.citation.endingPage594


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