This paper is focused on the optimization of the rear contact scheme of p-type c-Si LFC-PERC high efficiency solar cells minimizing base ohmic losses without jeopardize rear passivation. This is carried out optimizing on one hand the LFC laser conditions for minimum point resistance and on the other hand through a proper design of the contact grid layout finding the optimum trade off for a given base resistivity between rear passivation and base resistance. LFC process was carried out through 110 nm thermal SiO2 passivation layer using IR and green lasers. Very low specific contact resistances, 0.1 mcm2 have been achieved independently of the laser used. For optimum rear contacted area fraction efficiencies over 21.5% and 22%, for IR and green lasers respectively are expected in the 0.5-5 cm resistivity range.