Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology
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Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant at such supply voltages. This paper evaluates the impact of RTN on additional jitter in a ring oscillator. Since FDSOI allows a large range of body bias voltages, this work studies how body biasing affects the oscillation frequency but also the jitter effects. The impact of RTN in NMOS and PMOS devices on frequency as well as the levels of supplementary jitter introduced by RTN are evaluated and compared with classical device noise.
CitationBarajas, E. [et al.]. Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology. A: International Workshop on Power and Timing Modeling, Optimization and Simulation. "2018 IEEE 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS 2018): 2-4 July 2018, Spain". Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 82-87.
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