Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology

Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafría Maqueda, Montserrat; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V.

doi:10.1109/PATMOS.2018.8464145

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Document typeConference report

Defense date2018

PublisherInstitute of Electrical and Electronics Engineers (IEEE)

Rights accessRestricted access - publisher's policy

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder

Abstract

Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant at such supply voltages. This paper evaluates the impact of RTN on additional jitter in a ring oscillator. Since FDSOI allows a large range of body bias voltages, this work studies how body biasing affects the oscillation frequency but also the jitter effects. The impact of RTN in NMOS and PMOS devices on frequency as well as the levels of supplementary jitter introduced by RTN are evaluated and compared with classical device noise.

CitationBarajas, E. [et al.]. Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology. A: International Workshop on Power and Timing Modeling, Optimization and Simulation. "2018 IEEE 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS 2018): 2-4 July 2018, Spain". Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 82-87.

URIhttp://hdl.handle.net/2117/130108

DOI10.1109/PATMOS.2018.8464145

ISBN9781538663653

Publisher versionhttps://ieeexplore.ieee.org/document/8464145

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Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology

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