Modem gain-cell memories in advanced technologies
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
With the advent of the slowdown in DRAM capacitor scaling  and the increased reliability problems of traditional 6T SRAM memories , industry and academia have looked for alternative memory cells. Among those, gain- cells have attracted significant attention due to their smaller size (compared to SRAM) and non-destructive read operation (compared to DRAM) as well as considerable low power and reasonable robustness. This paper first summarizes the available evidences of SRAM and eDRAM in commercial and test chips. Then, it analyzes the performance, reliability and scaling of eDRAM gain-cells in 10 and 7 nm FinFET technology; as well as above and below VT (i.e. sub-threshold).
CitationAmat, E., Canal, R., Rubio, A. Modem gain-cell memories in advanced technologies. A: IEEE International Symposium on On-Line Testing and Robust System Design. "2018 IEEE 24th International Symposium on On-Line Testing and Robust System Design, (IOLTS 2018): 2–4 July 2018, Spain". Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 65-68.
- VIRTUOS - Virtualisation and Operating Systems - Ponències/Comunicacions de congressos 
- HIPICS - High Performance Integrated Circuits and Systems - Ponències/Comunicacions de congressos 
- Departament d'Arquitectura de Computadors - Ponències/Comunicacions de congressos [1.606]
- Departament d'Enginyeria Electrònica - Ponències/Comunicacions de congressos [1.474]
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