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P-type c-Si solar cells based on rear side laser processing of Al 2O 3/SiC x stacks
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | López Rodríguez, Gema |
dc.contributor.author | Colina Brito, Mónica Alejandra |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.contributor.other | Institut de Recerca en Energía de Catalunya |
dc.date.accessioned | 2018-11-20T18:01:36Z |
dc.date.issued | 2012-11 |
dc.identifier.citation | Ortega, P., Martin, I., Lopez, G., Colina, M.A., Orpella, A., Voz, C., Alcubilla, R. P-type c-Si solar cells based on rear side laser processing of Al 2O 3/SiC x stacks. "Solar energy materials and solar cells", Novembre 2012, vol. 106, p. 80-83. |
dc.identifier.issn | 0927-0248 |
dc.identifier.uri | http://hdl.handle.net/2117/124794 |
dc.description.abstract | In this work, we further investigate a new strategy to passivate and contact the rear side of p-type c-Si solar cells based on the laser processing of aluminum oxide (Al2O3)/amorphous silicon carbide (SiCx) stacks before rear metallization. For this stack, surface passivation of outstanding quality is obtained with effective surface recombination velocities in the 1 cm/s range on <100> FZ 2.3 O cm p-type substrates. The dielectric stack is processed with a 1064 nm laser defining square matrixes of spots where the dielectric film is opened. Simultaneously, part of the aluminum contained in the Al2O3 film is locally introduced into the c-Si, creating a p+ region. The presence of a SiCx capping layer onto the Al2O3 helps in the formation of this local back surface field reducing surface recombination velocity at the contacts to ~2×103 cm/s. This new technique is applied to 2×2 cm2 solar cells leading to photovoltaic conversion efficiencies well beyond 20% on 0.5 and 2.3 O cm substrates. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Solar cells |
dc.subject.other | Aluminum oxide |
dc.subject.other | Back surface field |
dc.subject.other | Laser-fired contacts |
dc.subject.other | Silicon carbide |
dc.subject.other | Silicon solar cells |
dc.subject.other | Surface passivation |
dc.title | P-type c-Si solar cells based on rear side laser processing of Al 2O 3/SiC x stacks |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/j.solmat.2012.05.012 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://www.sciencedirect.com/science/article/pii/S0927024812002371 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 10910857 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Ortega, P.; Martin, I.; Lopez, G.; Colina, M.A.; Orpella, A.; Voz, C.; Alcubilla, R. |
local.citation.publicationName | Solar energy materials and solar cells |
local.citation.volume | 106 |
local.citation.startingPage | 80 |
local.citation.endingPage | 83 |
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