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dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorMartín García, Isidro
dc.contributor.authorLópez Rodríguez, Gema
dc.contributor.authorColina Brito, Mónica Alejandra
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor.otherInstitut de Recerca en Energía de Catalunya
dc.date.accessioned2018-11-20T18:01:36Z
dc.date.issued2012-11
dc.identifier.citationOrtega, P., Martin, I., Lopez, G., Colina, M.A., Orpella, A., Voz, C., Alcubilla, R. P-type c-Si solar cells based on rear side laser processing of Al 2O 3/SiC x stacks. "Solar energy materials and solar cells", Novembre 2012, vol. 106, p. 80-83.
dc.identifier.issn0927-0248
dc.identifier.urihttp://hdl.handle.net/2117/124794
dc.description.abstractIn this work, we further investigate a new strategy to passivate and contact the rear side of p-type c-Si solar cells based on the laser processing of aluminum oxide (Al2O3)/amorphous silicon carbide (SiCx) stacks before rear metallization. For this stack, surface passivation of outstanding quality is obtained with effective surface recombination velocities in the 1 cm/s range on <100> FZ 2.3 O cm p-type substrates. The dielectric stack is processed with a 1064 nm laser defining square matrixes of spots where the dielectric film is opened. Simultaneously, part of the aluminum contained in the Al2O3 film is locally introduced into the c-Si, creating a p+ region. The presence of a SiCx capping layer onto the Al2O3 helps in the formation of this local back surface field reducing surface recombination velocity at the contacts to ~2×103 cm/s. This new technique is applied to 2×2 cm2 solar cells leading to photovoltaic conversion efficiencies well beyond 20% on 0.5 and 2.3 O cm substrates.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject.lcshSolar cells
dc.subject.otherAluminum oxide
dc.subject.otherBack surface field
dc.subject.otherLaser-fired contacts
dc.subject.otherSilicon carbide
dc.subject.otherSilicon solar cells
dc.subject.otherSurface passivation
dc.titleP-type c-Si solar cells based on rear side laser processing of Al 2O 3/SiC x stacks
dc.typeArticle
dc.subject.lemacCèl·lules solars
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.solmat.2012.05.012
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S0927024812002371
dc.rights.accessRestricted access - publisher's policy
drac.iddocument10910857
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
upcommons.citation.authorOrtega, P., Martin, I., Lopez, G., Colina, M.A., Orpella, A., Voz, C., Alcubilla, R.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameSolar energy materials and solar cells
upcommons.citation.volume106
upcommons.citation.startingPage80
upcommons.citation.endingPage83


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