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dc.contributor.authorArfaoui, Nawel
dc.contributor.authorBoukhili, W.
dc.contributor.authorMahdouani, M.
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorBourguiga, R.
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2018-11-09T15:05:09Z
dc.date.available2018-11-09T15:05:09Z
dc.date.issued2018-03-01
dc.identifier.citationArfaoui, N., Boukhili , W., Mahdouani, M., Puigdollers, J., Bourguiga, R. Static and dynamic modeling of organic thin film transistors: effect of channel length on the Mayer-Neldel rule energy and quasistatic capacitances. "European physical journal - Applied physics", 1 Març 2018, vol. 81, núm. 3 (30202), p. 1-12.
dc.identifier.issn1286-0042
dc.identifier.urihttp://hdl.handle.net/2117/123864
dc.description.abstractIn this work, pentacene based thin film transistors (TFTs) with different channel lengths (L¿=¿2.5, 5, 10 and 20¿µm) have been fabricated and characterized electrically. Exploiting the electrical characteristics, we have analyzed the channel length effect on the key parameters of fabricated TFTs. We found that the performance of pentacene-TFTs was enormously enhanced by the reduction of channel length .We have also examined the influence of contact and channel resistances (RC and Rch) on the electrical proprieties of fabricated TFTs, using the transmission line method (TLM). Then, we have modeled the dependence of the total resistance RT on the gate voltage VG using the grain boundary trapping Meyer–Neldel rule (GBT-MNR) model and we have successfully reproduced, the output characteristic of pentacene TFTs using the overall resistance extracted from the GBT-MNR model. Finally, in order to investigate the channel length effect on the dynamic behavior of fabricated devices, we have reported a dynamic model based on the quasistatic assumptions which were used for metal-oxide-semiconductor field-effect transistor (MOSFET). Accordingly, we have presented a simple small-signal equivalent circuit to calculate theoretically the capacitances of pentacene-TFTs for different channel lengths.
dc.format.extent12 p.
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
dc.subject.lcshTransistors
dc.titleStatic and dynamic modeling of organic thin film transistors: effect of channel length on the Mayer-Neldel rule energy and quasistatic capacitances
dc.typeArticle
dc.subject.lemacTransistors
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1051/epjap/2018170384
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://www.epjap.org/articles/epjap/abs/2018/03/ap170384/ap170384.html
dc.rights.accessOpen Access
drac.iddocument23237809
dc.description.versionPostprint (author's final draft)
dc.relation.projectidinfo:eu-repo/grantAgreement/AEI/2PE/ENE2017-87671-C3-2-R
upcommons.citation.authorArfaoui, N., Boukhili , W., Mahdouani, M., Puigdollers, J., Bourguiga, R.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameEuropean physical journal - Applied physics
upcommons.citation.volume81
upcommons.citation.number3 (30202)
upcommons.citation.startingPage1
upcommons.citation.endingPage12


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Except where otherwise noted, content on this work is licensed under a Creative Commons license: Attribution-NonCommercial-NoDerivs 3.0 Spain