Body bias generators for ultra low voltage circuits in FDSOI technology
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
Electronic circuits powered at ultra low voltages (300 mV and below) are desirable for their low energy and power consumption. However, the performance at such low power voltage is severely degraded. FDSOI technology, with its large range of body bias voltages can counteract the performance loss by applying forward body bias to the circuit. Charge pump circuits can be used to generate positive and negative body bias voltages integrated on the chip. This paper studies the main challenges in the design of such circuits operating at 300 mV to reach body bias voltages of more than 1 V.
CitationJusto, D., Nunes, D., Moll, F. Body bias generators for ultra low voltage circuits in FDSOI technology. A: Conference on Design of Circuits and Integrated Systems. "2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS 2017): Barcelona, Spain: 22-24 November 2017". Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 1-6.