Mostra el registre d'ítem simple

dc.contributor.authorLiang, Xiaoyao
dc.contributor.authorCanal Corretger, Ramon
dc.contributor.authorWei, Gu-Yeon
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors
dc.date.accessioned2018-09-17T08:10:42Z
dc.date.available2018-09-17T08:10:42Z
dc.date.issued2008-02
dc.identifier.citationLiang, X., Canal, R., Wei, G.-Y. Replacing 6T SRAMs with 3T1D DRAMs in the L1 data cache to combat process variability. "IEEE micro", Febrer 2008, vol. 28, núm. 1, p. 60-68.
dc.identifier.issn0272-1732
dc.identifier.urihttp://hdl.handle.net/2117/121204
dc.description.abstractWith continued technology scaling, process variations will be especially detrimental to six-transistor static memory structures (6T SRAMs). A memory architecture using three-transistor, one-diode DRAM (3T1D) cells in the L1 data cache tolerates wide process variations with little performance degradation, making it a promising choice for on-chip cache structures for next-generation microprocessors.
dc.format.extent9 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Informàtica::Arquitectura de computadors
dc.subject.lcshMemory management (Computer science)
dc.subject.lcshMicroprocessors
dc.subject.lcshCache memory
dc.subject.otherCache storage
dc.subject.otherDRAM chips
dc.subject.otherMicroprocessor chips
dc.subject.otherSRAM chips
dc.subject.otherSystem-on-chip
dc.subject.otherTransistors
dc.titleReplacing 6T SRAMs with 3T1D DRAMs in the L1 data cache to combat process variability
dc.typeArticle
dc.subject.lemacGestió de memòria (Informàtica)
dc.subject.lemacMicroprocessadors
dc.subject.lemacMemòria cau
dc.contributor.groupUniversitat Politècnica de Catalunya. VIRTUOS - Virtualisation and Operating Systems
dc.identifier.doi10.1109/MM.2008.12
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/4460513/
dc.rights.accessOpen Access
local.identifier.drac814466
dc.description.versionPostprint (published version)
local.citation.authorLiang, X.; Canal, R.; Wei, G.-Y.
local.citation.publicationNameIEEE micro
local.citation.volume28
local.citation.number1
local.citation.startingPage60
local.citation.endingPage68


Fitxers d'aquest items

Thumbnail

Aquest ítem apareix a les col·leccions següents

Mostra el registre d'ítem simple