Recent Submissions

  • Artificial neural networks as emerging tools for earthquake detection 

    Rojas, Otilio; Otero Calviño, Beatriz; Alvarado, Leonardo; Mus, Sergi; Tous Liesa, Rubén (2019)
    Article
    Open Access
    As seismic networks continue to spread and monitoring sensors become more ef¿cient, the abundance of data highly surpasses the processing capabilities of earthquake interpretation analysts. Earthquake catalogs are fundamental ...
  • SyRA: early system reliability analysis for cross-layer soft errors resilience in memory arrays of microprocessor systems 

    Vallero, Alessandro; Savino, Alessandro; Chatzidimitriou, Athanansios; Kaliorakis, Manolis; Kooli, Maha; Riera Villanueva, Marc; Di Natale, Giorgio; Bosio, Alberto; Canal Corretger, Ramon; Gizopoulos, Dimitris; Di Carlo, Stefano (Institute of Electrical and Electronics Engineers (IEEE), 2018-01-01)
    Article
    Open Access
    Cross-layer reliability is becoming the preferred solution when reliability is a concern in the design of a microprocessor-based system. Nevertheless, deciding how to distribute the error management across the different ...
  • Optimization of FinFET-based gain cells for low power sub-vt embedded drams 

    Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2018-06-01)
    Article
    Open Access
    Sub-threshold circuits (sub-V T) are a promising alternative in the implementation of low power electronics. The implementation of gain-cell embedded DRAMs (eDRAMs) based on FinFET devices requires a careful design to ...
  • Replacing 6T SRAMs with 3T1D DRAMs in the L1 data cache to combat process variability 

    Liang, Xiaoyao; Canal Corretger, Ramon; Wei, Gu-Yeon (2008-02)
    Article
    Open Access
    With continued technology scaling, process variations will be especially detrimental to six-transistor static memory structures (6T SRAMs). A memory architecture using three-transistor, one-diode DRAM (3T1D) cells in the ...
  • Review on suitable eDRAM configurations for next nano-metric electronics era 

    Amat, Esteve; Canal Corretger, Ramon; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio (2018-03)
    Article
    Open Access
    We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform ...

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