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dc.contributor.authorFonthal, Faruk
dc.contributor.authorGoyes, C
dc.contributor.authorRodríguez Martínez, Ángel
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2011-03-18T13:14:11Z
dc.date.available2011-03-18T13:14:11Z
dc.date.created2011
dc.date.issued2011
dc.identifier.citationFonthal, F.; Goyes, C.; Rodriguez, A. Electrical transport and impedance analysis of Au/porous silicon thin films. A: Electronics, Robotics and Automotive Mechanics Conference. "CERMA 2008". Cuernavaca: IEEE Press. Institute of Electrical and Electronics Engineers, 2011, p. 3-7.
dc.identifier.isbn978-0-7695-3320-9
dc.identifier.urihttp://hdl.handle.net/2117/11958
dc.description.abstractIn order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100> substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different sample
dc.format.extent5 p.
dc.language.isoeng
dc.publisherIEEE Press. Institute of Electrical and Electronics Engineers
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject.classificationElectronic engineering
dc.subject.lcshPorous Silicon
dc.subject.lcshElectrochemical etching
dc.subject.lcshElectrical conductivity
dc.subject.lcshElectrical equivalent circuit
dc.subject.lcshMetal-semiconductor-metal structure
dc.titleElectrical transport and impedance analysis of Au/porous silicon thin films
dc.typeConference report
dc.subject.lemacEnginyeria electrònica
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1109/CERMA.2008.62
dc.relation.publisherversionhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4641038
dc.rights.accessRestricted access - author's decision
drac.iddocument5357284
dc.description.versionPostprint (published version)
upcommons.citation.authorFonthal, F.; Goyes, C.; Rodriguez, A.
upcommons.citation.contributorElectronics, Robotics and Automotive Mechanics Conference
upcommons.citation.pubplaceCuernavaca
upcommons.citation.publishedtrue
upcommons.citation.publicationNameCERMA 2008
upcommons.citation.startingPage3
upcommons.citation.endingPage7


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