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dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorMaya Sánchez, Mª del Carmen
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.identifier.citationLázaro, A.; Maya, M. C.; Pradell, L. Measurement of on-wafer transistor noise parameters without a tuner using unrestricted noise sources. Microwave journal, 2002, vol. 45, núm. 3, p.20-46.
dc.description.abstractThe authors present a method for calibrating the four noise parameters of a noise receiver which does not require a tuner The method permits using general (mismatched) noise sources, which may present very different source reflection coefficients between their hot and cold states. The method is applied to the calibration of a noise set-up using on-wafer noise sources (a reverse-biased cold-FET and an avalanche noise diode). Experimental validation of the receiver calibration and its application to the determination Of on-wafer FET noise parameters to 40 GHz is presented.
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject.lcshField-effect transistors
dc.subject.lcshMicrowave measurements
dc.subject.lcshNoise Measurement
dc.subject.otherintegrated circuit noise
dc.subject.othermicrowave measurement
dc.subject.othersemiconductor device noise
dc.subject.otheron-wafer transistor noise parameters
dc.subject.othernoise receiver
dc.subject.otherismatched noise sources
dc.subject.othersource reflection coefficients
dc.subject.othernoise set-up
dc.subject.otherreverse-biased cold-FET
dc.subject.otheravalanche noise diode
dc.subject.other40 GHz
dc.subject.otherelectric noise measurement
dc.titleMeasurement of on-wafer transistor noise parameters without a tuner using unrestricted noise sources
dc.subject.lemacMicroones -- Mesurament
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
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