Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C
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In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV–visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 O·cm) FZ silicon wafers. Finally, 1 cm2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 O·cm) CZ silicon wafers with aluminum back-surface-field contact.
CitationMuñoz, D., Voz, C., Martin, I., Orpella, A., Puigdollers, J., Alcubilla, R., Villar, F., Bertomeu, J., Andreu Batallé, Jordi, Damon-Lacoste, J., Cabarrocas, R. Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C. "Thin solid films", Gener 2008, vol. 516, núm. 5, p. 761-764.