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Fullerene thin-film transistors fabricated on polymeric gate dielectric
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Cheylan, Stephanie |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Vetter, M |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2018-06-08T15:05:35Z |
dc.date.issued | 2007-07 |
dc.identifier.citation | Puigdollers, J., Voz, C., Cheylan, S., Orpella, A., Vetter, M., Alcubilla, R. Fullerene thin-film transistors fabricated on polymeric gate dielectric. "Thin solid films", Juliol 2007, vol. 515, núm. 19, p. 7667-7670. |
dc.identifier.issn | 0040-6090 |
dc.identifier.uri | http://hdl.handle.net/2117/117956 |
dc.description.abstract | Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant differences in the microstructure of fullerene thin-films grown on polymethyl methacrylate were observed. Devices with either gold or aluminium top electrodes have been fabricated. Although the lower work-function of aluminium compared to gold should favour electron injection, similar field-effect mobilities in the range of 10- 2 cm2 V- 1 s- 1 were achieved in both cases. Actually, the output characteristics indicate that organic thin-film transistors behave more linearly with gold than with aluminium electrodes. These results confirm that not only energy barriers determine carrier injection at metal/organic interfaces, but also chemical interactions. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
dc.subject.lcsh | Organic semiconductors |
dc.subject.other | Organic semiconductors |
dc.subject.other | Electronic devices |
dc.title | Fullerene thin-film transistors fabricated on polymeric gate dielectric |
dc.type | Article |
dc.subject.lemac | Semiconductors orgànics |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/j.tsf.2006.11.085 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://www.sciencedirect.com/science/article/pii/S0040609006014118 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 763851 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Puigdollers, J.; Voz, C.; Cheylan, S.; Orpella, A.; Vetter, M.; Alcubilla, R. |
local.citation.publicationName | Thin solid films |
local.citation.volume | 515 |
local.citation.number | 19 |
local.citation.startingPage | 7667 |
local.citation.endingPage | 7670 |
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