Fullerene thin-film transistors fabricated on polymeric gate dielectric
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Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant differences in the microstructure of fullerene thin-films grown on polymethyl methacrylate were observed. Devices with either gold or aluminium top electrodes have been fabricated. Although the lower work-function of aluminium compared to gold should favour electron injection, similar field-effect mobilities in the range of 10- 2 cm2 V- 1 s- 1 were achieved in both cases. Actually, the output characteristics indicate that organic thin-film transistors behave more linearly with gold than with aluminium electrodes. These results confirm that not only energy barriers determine carrier injection at metal/organic interfaces, but also chemical interactions.
CitationPuigdollers, J., Voz, C., Cheylan, S., Orpella, A., Vetter, M., Alcubilla, R. Fullerene thin-film transistors fabricated on polymeric gate dielectric. "Thin solid films", Juliol 2007, vol. 515, núm. 19, p. 7667-7670.