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dc.contributor.authorVetter, Michael
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorFerré Tomas, Rafel
dc.contributor.authorMartín García, Isidro
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorAndreu Batallé, Jordi
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2018-06-06T17:30:37Z
dc.date.issued2006-07
dc.identifier.citationVetter, M., Voz, C., Ferre, R., Martin, I., Orpella, A., Puigdollers, J., Andreu Batallé, Jordi, Alcubilla, R. Electronic properties of intrinsic and doped amorphous silicon carbide films. "Thin solid films", Juliol 2006, vol. 511-512, p. 290-294.
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/2117/117876
dc.description.abstractHydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms- 1 is possible up to 6¿ diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiCx : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 °C. Two transition temperatures, Ts˜80 °C and Ts˜170 °C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (Ea) and conductivity pre-factor (s0) were calculated for a large number of samples with different composition. A correlation between Ea and s0 was found giving a Meyer–Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature Tm = 400 °C, and an intercept at s00 = 0.1 O- 1cm- 1.
dc.format.extent5 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject.lcshAmorphous semiconductors
dc.subject.otherAmorphous silicon carbide
dc.subject.otherConductivity
dc.subject.otherPassivation
dc.subject.otherMeyer–Neldel
dc.titleElectronic properties of intrinsic and doped amorphous silicon carbide films
dc.typeArticle
dc.subject.lemacSemiconductors amorfs
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.tsf.2005.11.108
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S0040609005023229
dc.rights.accessRestricted access - publisher's policy
drac.iddocument763727
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
upcommons.citation.authorVetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu Batallé, Jordi; Alcubilla, R.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameThin solid films
upcommons.citation.volume511-512
upcommons.citation.startingPage290
upcommons.citation.endingPage294


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