Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD
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Tipus de documentArticle
Data publicació2006-07
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Abstract
In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are combined with thin intrinsic amorphous silicon buffers to form the heterojunction emitter and the low-temperature back surface field contact. The maximum temperature achieved in the whole fabrication process is 200 °C. A comprehensive electrical characterization has been done, including current density-voltage characteristics and external quantum efficiency curves with illumination from both sides. These results evidence the feasibility of efficient bifacial heterojunction silicon solar cells fully processed at low temperature.
CitacióMuñoz, D., Voz, C., Fonrodona, M., Garin, M., Orpella, A., Vetter, M., Puigdollers, J., Alcubilla, R., Villar, F., Bertoeu, J., Andreu Batallé, J. Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD. "Journal of non-crystalline solids", Juliol 2006, vol. 352, núm. 9-20, p. 1953-1957.
ISSN0022-3093
Versió de l'editorhttps://www.sciencedirect.com/science/article/pii/S0022309306001451
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