Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films were deposited by thermal evaporation in a high vacuum system. The maximum process temperature achieved was 100 °C, corresponding to the baking of the PMMA. The devices showed satisfactory p-type electrical characteristics with field-effect mobility and threshold voltage values around 0.2 × 10-4 cm2 V-1 s-1 and 6 V, respectively. The device electrical characteristics were correlated with the structural and morphological properties of the CuPc thin-films.