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Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor
dc.contributor.author | Campos García, Antonio |
dc.contributor.author | Riera Galindo, Sergi |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Mas Torrent, Marta |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2018-05-30T12:17:34Z |
dc.date.available | 2019-04-19T00:30:11Z |
dc.date.issued | 2018-04-19 |
dc.identifier.citation | Campos, A., Riera, S., Puigdollers, J., Mas, M. Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor. "ACS Applied materials and interfaces", 19 Abril 2018, vol. 10, p. 15952-15961. |
dc.identifier.issn | 1944-8252 |
dc.identifier.uri | http://hdl.handle.net/2117/117625 |
dc.description | This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review. To access the final edited and published work see DOI:10.1021/acsami.8b02851. |
dc.description.abstract | Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor–dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor–dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously. |
dc.format.extent | 10 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors |
dc.subject.lcsh | Transistors |
dc.subject.other | Density-of-states |
dc.subject.other | High stability |
dc.subject.other | N-type |
dc.subject.other | OFET |
dc.subject.other | Semiconductor-dielectric interface |
dc.title | Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor |
dc.type | Article |
dc.subject.lemac | Transistors |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1021/acsami.8b02851 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://pubs.acs.org/doi/10.1021/acsami.8b02851 |
dc.rights.access | Open Access |
local.identifier.drac | 22955154 |
dc.description.version | Postprint (published version) |
dc.relation.projectid | info:eu-repo/grantAgreement/EC/FP7/306826/EU/Surface Self-Assembled Molecular Electronic Devices: Logic Gates, Memories and Sensors/E-GAMES |
local.citation.author | Campos, A.; Riera, S.; Puigdollers, J.; Mas, M. |
local.citation.publicationName | ACS Applied materials and interfaces |
local.citation.volume | 10 |
local.citation.startingPage | 15952 |
local.citation.endingPage | 15961 |
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