Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor
Rights accessOpen Access
European Commission's projectE-GAMES - Surface Self-Assembled Molecular Electronic Devices: Logic Gates, Memories and Sensors (EC-FP7-306826)
Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor–dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor–dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review. To access the final edited and published work see DOI:10.1021/acsami.8b02851.
CitationCampos, A., Riera, S., Puigdollers, J., Mas, M. Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor. "ACS Applied materials and interfaces", 19 Abril 2018, vol. 10, p. 15952-15961.
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder