Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor
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Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor–dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor–dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review. To access the final edited and published work see DOI:10.1021/acsami.8b02851.
CitationCampos, A., Riera, S., Puigdollers, J., Mas, M. Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor. "ACS Applied materials and interfaces", 19 Abril 2018, vol. 10, p. 15952-15961.