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Interdigitated laser-contacted solar cell on liquid-phase crystallized silicon on glass
dc.contributor.author | Vetter, Michael |
dc.contributor.author | López Rodríguez, Gema |
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Andrä, Gudrun |
dc.contributor.author | Muñoz, David |
dc.contributor.author | Molpeceres Alvarez, Carlos |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2018-04-27T14:27:41Z |
dc.date.available | 2018-04-27T14:27:41Z |
dc.date.issued | 2016 |
dc.identifier.citation | Vetter, M., Lopez, G., Ortega, P., Martin, I., Andrä, G., Muñoz, D., Molpeceres, C. Interdigitated laser-contacted solar cell on liquid-phase crystallized silicon on glass. A: European Photovoltaic Solar Energy Conference and Exhibition. "EU PVSEC 2017: proceedings: 33rd European Photovoltaic Solar Energy Conference and Exhibition: proceedings of the international conference held in Amsterdam, The Netherlands, 25 September-29 September 2017". München: WIP Renewable Energies, 2016, p. 827-831. |
dc.identifier.uri | http://hdl.handle.net/2117/116816 |
dc.description.abstract | 10 µm thick liquid-phase crystallized silicon (Si) layers on 3.2 mm Borofloat 33 glass (5cm x 5cm) are fabricated by continuous wave line focus laser (808 nm). A sputtered SiO2/SiON layer stack has been implemented as barrier layer at the glass Si interface. Solar cells with interdigitated back contact are prepared on these multicrystalline layers by using low temperature (<400oC) Doped-by-Laser (DopLa) fabrication concept. ALD Al2O3/ PECVD amorphous intrinsic Si carbide (SiCx(i)) stack for emitter passivation and a-SiCy(i)/P-doped a-SiCz(n)/a-SiCx(i) stack for base passivation are deposited. With short pulse (ns) UV laser (355 nm) p-type emitter (by Al-diffusion from Al2O3) and point contacts with back surface field (by P-diffusion from a-SiCz(n) layer) are fabricated on n-type mc-Si absorbers layers. Solar cell process steps are monitored by charge carrier lifetime measurements using the quasi steady-state photoconductance method. A strong dependency of charge carrier lifetime on injection level and doping density of absorbers is observed. Higher lifetimes are found for lower absorber doping concentrations. In 0.7 Ocm LPCSG absorber highest teff ˜ 300 ns corresponding to Leff > 20 µm is found. Laser doping and contacting using UV laser resulted in small (< 20 mV) loss of Voc(1sun). Crack formation in LPCSG absorbers after laser crystallization process presents technological problems in the preparation of the interdigitated metal contact. |
dc.format.extent | 5 p. |
dc.language.iso | eng |
dc.publisher | WIP Renewable Energies |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Solar cells |
dc.subject.other | multi-crystalline silicon |
dc.subject.other | thin film |
dc.subject.other | laser crystallization |
dc.subject.other | laser doping |
dc.subject.other | carrier lifetime |
dc.subject.other | quasi steadystate photoconductance |
dc.subject.other | IBC |
dc.title | Interdigitated laser-contacted solar cell on liquid-phase crystallized silicon on glass |
dc.type | Conference lecture |
dc.subject.lemac | Cèl·lules solars |
dc.subject.lemac | Bateries solars |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.4229/EUPVSEC20172017-2CV.2.19 |
dc.relation.publisherversion | http://www.eupvsec-proceedings.com/proceedings?paper=43506 |
dc.rights.access | Open Access |
local.identifier.drac | 21718026 |
dc.description.version | Postprint (published version) |
local.citation.author | Vetter, M.; Lopez, G.; Ortega, P.; Martin, I.; Andrä, G.; Muñoz, D.; Molpeceres, C. |
local.citation.contributor | European Photovoltaic Solar Energy Conference and Exhibition |
local.citation.pubplace | München |
local.citation.publicationName | EU PVSEC 2017: proceedings: 33rd European Photovoltaic Solar Energy Conference and Exhibition: proceedings of the international conference held in Amsterdam, The Netherlands, 25 September-29 September 2017 |
local.citation.startingPage | 827 |
local.citation.endingPage | 831 |