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dc.contributor.authorCalle Martín, Eric
dc.contributor.authorCarrió, David
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorvon Gastrow, Guillaume
dc.contributor.authorSavin, Hele
dc.contributor.authorMartín García, Isidro
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2018-04-27T14:04:11Z
dc.date.available2018-04-27T14:04:11Z
dc.date.issued2016
dc.identifier.citationCalle, E., Carrió, D., Ortega, P., von Gastrow, G., Savin, H., Martin, I., Alcubilla, R. 2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells. A: European Photovoltaic Solar Energy Conference and Exhibition. "EU PVSEC 2017: proceedings: 33rd European Photovoltaic Solar Energy Conference and Exhibition: proceedings of the international conference held in Amsterdam, The Netherlands, 25 September-29 September 2017". München: WIP Renewable Energies, 2016, p. 857-860.
dc.identifier.urihttp://hdl.handle.net/2117/116814
dc.description.abstractBlack silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the efficiency limits of interdigitated back-contacted c-Si(n) solar cells with line or point contacts respectively, using ALD Al2O3 passivated b-Si in the front surface. Realistic physical and technological parameters involved in a conventional oven-based fabrication process are considered in the simulations, especially those related to surface recombination on the b-Si as well as high doped p+/n+ strip regions. One important issue is the temporal stability of surface passivation on b-Si surfaces. In this work experimental long-term b-Si surface passivation data after two years and its impact on cell performance are studied. Simulations demonstrate initial and final photovoltaic efficiencies over 24.6% and 23.2% respectively for an emitter coverage of 80% independently of the cell contact strategy. A photocurrent loss about 1.3 mA/cm2 occurs when surface recombination velocity at the b-Si surfaces degrades from 6 cm/s to a final value of 28 cm/s.
dc.format.extent4 p.
dc.language.isoeng
dc.publisherWIP Renewable Energies
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject.lcshSolar cells
dc.subject.otherc-Si
dc.subject.other3D simulations
dc.subject.otherblack-silicon
dc.subject.otherIBC solar cell
dc.subject.otherpoint-like contacts
dc.subject.othersurface passivation
dc.title2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells
dc.typeConference lecture
dc.subject.lemacCèl·lules solars
dc.subject.lemacBateries solars
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.4229/EUPVSEC20172017-2CV.2.37
dc.relation.publisherversionhttp://www.eupvsec-proceedings.com/proceedings?paper=40803
dc.rights.accessOpen Access
local.identifier.drac21718047
dc.description.versionPostprint (author's final draft)
local.citation.authorCalle, E.; Carrió, D.; Ortega, P.; von Gastrow, G.; Savin, H.; Martin, I.; Alcubilla, R.
local.citation.contributorEuropean Photovoltaic Solar Energy Conference and Exhibition
local.citation.pubplaceMünchen
local.citation.publicationNameEU PVSEC 2017: proceedings: 33rd European Photovoltaic Solar Energy Conference and Exhibition: proceedings of the international conference held in Amsterdam, The Netherlands, 25 September-29 September 2017
local.citation.startingPage857
local.citation.endingPage860


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