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2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells
dc.contributor.author | Calle Martín, Eric |
dc.contributor.author | Carrió, David |
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | von Gastrow, Guillaume |
dc.contributor.author | Savin, Hele |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2018-04-27T14:04:11Z |
dc.date.available | 2018-04-27T14:04:11Z |
dc.date.issued | 2016 |
dc.identifier.citation | Calle, E., Carrió, D., Ortega, P., von Gastrow, G., Savin, H., Martin, I., Alcubilla, R. 2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells. A: European Photovoltaic Solar Energy Conference and Exhibition. "EU PVSEC 2017: proceedings: 33rd European Photovoltaic Solar Energy Conference and Exhibition: proceedings of the international conference held in Amsterdam, The Netherlands, 25 September-29 September 2017". München: WIP Renewable Energies, 2016, p. 857-860. |
dc.identifier.uri | http://hdl.handle.net/2117/116814 |
dc.description.abstract | Black silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the efficiency limits of interdigitated back-contacted c-Si(n) solar cells with line or point contacts respectively, using ALD Al2O3 passivated b-Si in the front surface. Realistic physical and technological parameters involved in a conventional oven-based fabrication process are considered in the simulations, especially those related to surface recombination on the b-Si as well as high doped p+/n+ strip regions. One important issue is the temporal stability of surface passivation on b-Si surfaces. In this work experimental long-term b-Si surface passivation data after two years and its impact on cell performance are studied. Simulations demonstrate initial and final photovoltaic efficiencies over 24.6% and 23.2% respectively for an emitter coverage of 80% independently of the cell contact strategy. A photocurrent loss about 1.3 mA/cm2 occurs when surface recombination velocity at the b-Si surfaces degrades from 6 cm/s to a final value of 28 cm/s. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.publisher | WIP Renewable Energies |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Solar cells |
dc.subject.other | c-Si |
dc.subject.other | 3D simulations |
dc.subject.other | black-silicon |
dc.subject.other | IBC solar cell |
dc.subject.other | point-like contacts |
dc.subject.other | surface passivation |
dc.title | 2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells |
dc.type | Conference lecture |
dc.subject.lemac | Cèl·lules solars |
dc.subject.lemac | Bateries solars |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.4229/EUPVSEC20172017-2CV.2.37 |
dc.relation.publisherversion | http://www.eupvsec-proceedings.com/proceedings?paper=40803 |
dc.rights.access | Open Access |
local.identifier.drac | 21718047 |
dc.description.version | Postprint (author's final draft) |
local.citation.author | Calle, E.; Carrió, D.; Ortega, P.; von Gastrow, G.; Savin, H.; Martin, I.; Alcubilla, R. |
local.citation.contributor | European Photovoltaic Solar Energy Conference and Exhibition |
local.citation.pubplace | München |
local.citation.publicationName | EU PVSEC 2017: proceedings: 33rd European Photovoltaic Solar Energy Conference and Exhibition: proceedings of the international conference held in Amsterdam, The Netherlands, 25 September-29 September 2017 |
local.citation.startingPage | 857 |
local.citation.endingPage | 860 |