2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells
Document typeConference lecture
PublisherWIP Renewable Energies
Rights accessOpen Access
Black silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the efficiency limits of interdigitated back-contacted c-Si(n) solar cells with line or point contacts respectively, using ALD Al2O3 passivated b-Si in the front surface. Realistic physical and technological parameters involved in a conventional oven-based fabrication process are considered in the simulations, especially those related to surface recombination on the b-Si as well as high doped p+/n+ strip regions. One important issue is the temporal stability of surface passivation on b-Si surfaces. In this work experimental long-term b-Si surface passivation data after two years and its impact on cell performance are studied. Simulations demonstrate initial and final photovoltaic efficiencies over 24.6% and 23.2% respectively for an emitter coverage of 80% independently of the cell contact strategy. A photocurrent loss about 1.3 mA/cm2 occurs when surface recombination velocity at the b-Si surfaces degrades from 6 cm/s to a final value of 28 cm/s.
CitationCalle, E., Carrió, D., Ortega, P., von Gastrow, G., Savin, H., Martin, I., Alcubilla, R. 2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells. A: European Photovoltaic Solar Energy Conference and Exhibition. "EU PVSEC 2017: proceedings: 33rd European Photovoltaic Solar Energy Conference and Exhibition: proceedings of the international conference held in Amsterdam, The Netherlands, 25 September-29 September 2017". München: WIP Renewable Energies, 2016, p. 857-860.