2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells

Cita com:
hdl:2117/116814
Document typeConference lecture
Defense date2016
PublisherWIP Renewable Energies
Rights accessOpen Access
Abstract
Black silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the efficiency limits of interdigitated back-contacted c-Si(n) solar cells with line or point contacts respectively, using ALD Al2O3 passivated b-Si in the front surface. Realistic physical and technological parameters involved in a conventional oven-based fabrication process are considered in the simulations, especially those related to surface recombination on the b-Si as well as high doped p+/n+ strip regions. One important issue is the temporal stability of surface passivation on b-Si surfaces. In this work experimental long-term b-Si surface passivation data after two years and its impact on cell performance are studied. Simulations demonstrate initial and final photovoltaic efficiencies over 24.6% and 23.2% respectively for an emitter coverage of 80% independently of the cell contact strategy. A photocurrent loss about 1.3 mA/cm2 occurs when surface recombination velocity at the b-Si surfaces degrades from 6 cm/s to a final value of 28 cm/s.
CitationCalle, E., Carrió, D., Ortega, P., von Gastrow, G., Savin, H., Martin, I., Alcubilla, R. 2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells. A: European Photovoltaic Solar Energy Conference and Exhibition. "EU PVSEC 2017: proceedings: 33rd European Photovoltaic Solar Energy Conference and Exhibition: proceedings of the international conference held in Amsterdam, The Netherlands, 25 September-29 September 2017". München: WIP Renewable Energies, 2016, p. 857-860.
Publisher versionhttp://www.eupvsec-proceedings.com/proceedings?paper=40803
Files | Description | Size | Format | View |
---|---|---|---|---|
2CV.2.37_paper.pdf | Paper publicado en los proceedings | 788,8Kb | View/Open |
All rights reserved. This work is protected by the corresponding intellectual and industrial
property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public
communication or transformation of this work are prohibited without permission of the copyright holder