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dc.contributor.authorAhmed Waseem, Waqas Waseem
dc.contributor.authorBotey Cumella, Muriel
dc.contributor.authorHerrero Simon, Ramon
dc.contributor.authorStaliunas, Kestutis
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Física
dc.date.accessioned2018-04-27T12:28:53Z
dc.date.available2018-04-27T12:28:53Z
dc.date.issued2017
dc.identifier.citationAhmed, W., Botey, M., Herrero, R., Staliunas, K. PT-axisymmetric VCSELs with linear central defect. A: International Conference on Transparent Optical Networks. "2017 19th International Conference on Transparent Optical Networks (ICTON 2017): Girona, Spain: 2-6 July 2017". Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-4.
dc.identifier.isbn978-1-5386-0859-3
dc.identifier.urihttp://hdl.handle.net/2117/116793
dc.description.abstractSemiconductor Lasers and particularly Vertical-Cavity Surface-Emitting Lasers (VCSELs) are important laser sources used for many purposes. However, the applications of these lasers are mainly restricted by their strongly multimode operation given by the lack of an intrinsic transverse mode selection mechanism [1]. The introduction of an axial PT-symmetric potential within this kind of lasers is expected to induce a field enhancement and localization at the symmetry axis, central part of the laser. The required complex potential, combining a modulated refractive index and gain-loss distributions, may be achieved by different configurations with actual fabrication techniques. The Complex Ginzburg-Landau equation is used as a simple VCSELs model, and the numerical results show important localization effects; due to the asymmetric mode coupling energy converges to the center leading to a strong light confinement. The main consequence is a narrow and bright laser emission from the central part of the device. As the system nonlinearities introduce saturation limiting the maximum intensity of the output beam, the inclusion of a central linear defect in the structure allows a larger field concentration.
dc.format.extent4 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Física
dc.subject.lcshNanophotonics
dc.subject.otherNanophotonics
dc.subject.otherasymmetric radial coupling
dc.subject.otherinward propagating waves
dc.subject.otherhigh localization
dc.subject.otherextreme field enhancement
dc.subject.otheroptical parity-time symmetric systems
dc.subject.otherPT-axisymmetric lasers
dc.titlePT-axisymmetric VCSELs with linear central defect
dc.typeConference report
dc.subject.lemacNanofotònica
dc.contributor.groupUniversitat Politècnica de Catalunya. DONLL - Dinàmica no Lineal, Òptica no Lineal i Làsers
dc.identifier.doi10.1109/ICTON.2017.8024810
dc.rights.accessOpen Access
drac.iddocument21990784
dc.description.versionPostprint (published version)
upcommons.citation.authorAhmed, W., Botey, M., Herrero, R., Staliunas, K.
upcommons.citation.contributorInternational Conference on Transparent Optical Networks
upcommons.citation.publishedtrue
upcommons.citation.publicationName2017 19th International Conference on Transparent Optical Networks (ICTON 2017): Girona, Spain: 2-6 July 2017
upcommons.citation.startingPage1
upcommons.citation.endingPage4


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Except where otherwise noted, content on this work is licensed under a Creative Commons license: Attribution-NonCommercial-NoDerivs 3.0 Spain