PT-axisymmetric VCSELs with linear central defect
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
Semiconductor Lasers and particularly Vertical-Cavity Surface-Emitting Lasers (VCSELs) are important laser sources used for many purposes. However, the applications of these lasers are mainly restricted by their strongly multimode operation given by the lack of an intrinsic transverse mode selection mechanism . The introduction of an axial PT-symmetric potential within this kind of lasers is expected to induce a field enhancement and localization at the symmetry axis, central part of the laser. The required complex potential, combining a modulated refractive index and gain-loss distributions, may be achieved by different configurations with actual fabrication techniques. The Complex Ginzburg-Landau equation is used as a simple VCSELs model, and the numerical results show important localization effects; due to the asymmetric mode coupling energy converges to the center leading to a strong light confinement. The main consequence is a narrow and bright laser emission from the central part of the device. As the system nonlinearities introduce saturation limiting the maximum intensity of the output beam, the inclusion of a central linear defect in the structure allows a larger field concentration.
CitationAhmed, W., Botey, M., Herrero, R., Staliunas, K. PT-axisymmetric VCSELs with linear central defect. A: International Conference on Transparent Optical Networks. "2017 19th International Conference on Transparent Optical Networks (ICTON 2017): Girona, Spain: 2-6 July 2017". Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-4.