A novel active gate driver for improving SiC MOSFET switching trajectory
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
The trend in power electronic applications is to reach higher power density and higher efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC MOSFET) are of great interest because they can work at higher switching frequency with low losses. The increase of the switching speed in power devices leads to high power density systems. However, this can generate problems such as overshoots, oscillations, additional losses, and electromagnetic interference (EMI). In this paper, a novel active gate driver (AGD) for improving the SiC MOSFET switching trajectory with high performance is presented. The AGD is an open-loop control system and its principle is based on gate energy decrease with a gate resistance increment during the Miller plateau effect on gate-source voltage. The proposed AGD has been designed and validated through experimental tests for high-frequency operation. Moreover, an EMI discussion and a performance analysis were realized for the AGD. The results show that the AGD can reduce the overshoots, oscillations, and losses without compromising the EMI. In addition, the AGD can control the turn-on and turn-off transitions separately, and it is suitable for working with asymmetrical supplies required by SiC MOSFETs.
CitationParedes, A., Sala, V., Ghorbani, H., Romeral, L. A novel active gate driver for improving SiC MOSFET switching trajectory. "IEEE transactions on industrial electronics", 1 Novembre 2017, vol. 64, núm. 11, p. 1-11.
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder