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RF-MEMS uniplanar 180º Phase Switch based on switching between two out-of-phase paths

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RF-MEMS uniplanar 180º Phase Switch based on switching between two out-of-phase paths (277,2Kb) (Restricted access)   Request copy 

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Llamas Morote, Marco Antonio
Pradell i Cara, LluísMés informacióMés informacióMés informació
Girbau Sala, David
Ribó, Miquel
Lázaro Villa, José AntonioMés informacióMés informacióMés informació
Giacomozzi, Flavio
Margesin, Benno
Document typeArticle
Defense date2011
Rights accessRestricted access - publisher's policy
Attribution-NonCommercial-NoDerivs 3.0 Spain
Except where otherwise noted, content on this work is licensed under a Creative Commons license : Attribution-NonCommercial-NoDerivs 3.0 Spain
Abstract
A phase switch based on switching between two twoport passive networks with a phase difference of 180º is reported. Two RF MEMS single-pole-double-throw structures are used to select the phase path. The fabrication is made on both highresistivity silicon and quartz substrates using the eight-mask FBK-irst surface micromachining process. The measured phase shift is 180º±5º in the frequency range 14−20 GHz on quartz wafers and in the range 8−20 Ghz on silicon wafers.
CitationLlamas, M.A. [et al.]. RF-MEMS uniplanar 180º Phase Switch based on switching between two out-of-phase paths. A: International Conference on RF MEMS and RF Microsystems. "11th International Conference on RF MEMS and RF Microsystems - MEMSWAVE-2010". Otranto: 2011, p. 1-4. 
URIhttp://hdl.handle.net/2117/11634
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  • Departament de Teoria del Senyal i Comunicacions - Articles de revista [2.351]
  • GCO - Grup de Comunicacions Òptiques - Articles de revista [216]
  • RF&MW - Grup de Recerca de Sistemes, Dispositius i Materials de RF i Microones - Articles de revista [199]
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