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dc.contributor.authorCollado Gómez, Juan Carlos
dc.contributor.authorMateu Mateu, Jordi
dc.contributor.authorGarcía Pastor, David
dc.contributor.authorPerea Robles, Rafael
dc.contributor.authorHueltes Escobar, Alberto
dc.contributor.authorKreuzer, Susanne
dc.contributor.authorAigner, Robert
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.identifier.citationCollado, J., Mateu, J., Garcia, D., Perea-Robles, R., Hueltes, A., Kreuzer, S., Aigner, R. Nonlinear effects of SiO2 layers in bulk acoustic wave resonators. "IEEE transactions on microwave theory and techniques", April 2018, vol. 66, núm. 4, p. 1773-1779.
dc.description©2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.description.abstractThis paper presents the development of a comprehensive distributed circuit model to account for the existing nonlinear effects in bulk acoustic wave (BAW) resonators. The comprehensiveness of the model and its distributed implementation allow for the inclusion of the nonlinear effects occurring in any layer of the BAW configuration, not only the piezoelectric layer. The model has been applied to evaluate the nonlinear contribution of the piezoelectric layer and silicon dioxide (SiO₂) layer in the Bragg reflector. The nonlinear manifestations are a function of the frequency of the driving fundamental tones. Accurate measurements of state-of-the-art resonators validate the model proposed and confirm the contribution of the SiO₂ layer in the overall nonlinear performance.
dc.format.extent7 p.
dc.publisherIEEE Microwave Theory and Techniques Society
dc.subjectÀrees temàtiques de la UPC::Física::Acústica
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject.lcshIntegrated circuits
dc.subject.otherAcoustic waves
dc.subject.otherBulk acoustic wave (BAW)
dc.subject.otherHarmonic analysis
dc.subject.otherIntegrated circuit modeling
dc.subject.otherMathematical model
dc.subject.othersecond harmonic (H2)
dc.subject.otherthird harmonic (H3)
dc.subject.otherthird-order intermodulation (IMD3) product.
dc.subject.otherTransmission line measurements
dc.titleNonlinear effects of SiO2 layers in bulk acoustic wave resonators
dc.subject.lemacCircuits integrats
dc.contributor.groupUniversitat Politècnica de Catalunya. CSC - Components and Systems for Communications Research Group
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
dc.description.versionPostprint (author's final draft)
local.citation.authorCollado, J.; Mateu, J.; Garcia, D.; Perea-Robles, R.; Hueltes, A.; Kreuzer, S.; Aigner, R.
local.citation.publicationNameIEEE transactions on microwave theory and techniques

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