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Nonlinear effects of SiO2 layers in bulk acoustic wave resonators

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10.1109/TMTT.2017.2783377
 
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hdl:2117/116108

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Collado Gómez, Juan CarlosMés informacióMés informacióMés informació
Mateu Mateu, JordiMés informacióMés informacióMés informació
García Pastor, DavidMés informació
Perea Robles, RafaelMés informació
Hueltes Escobar, Alberto
Kreuzer, Susanne
Aigner, Robert
Document typeArticle
Defense date2018-04
PublisherIEEE Microwave Theory and Techniques Society
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
This paper presents the development of a comprehensive distributed circuit model to account for the existing nonlinear effects in bulk acoustic wave (BAW) resonators. The comprehensiveness of the model and its distributed implementation allow for the inclusion of the nonlinear effects occurring in any layer of the BAW configuration, not only the piezoelectric layer. The model has been applied to evaluate the nonlinear contribution of the piezoelectric layer and silicon dioxide (SiO₂) layer in the Bragg reflector. The nonlinear manifestations are a function of the frequency of the driving fundamental tones. Accurate measurements of state-of-the-art resonators validate the model proposed and confirm the contribution of the SiO₂ layer in the overall nonlinear performance.
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©2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
CitationCollado, J., Mateu, J., Garcia, D., Perea-Robles, R., Hueltes, A., Kreuzer, S., Aigner, R. Nonlinear effects of SiO2 layers in bulk acoustic wave resonators. "IEEE transactions on microwave theory and techniques", April 2018, vol. 66, núm. 4, p. 1773-1779. 
URIhttp://hdl.handle.net/2117/116108
DOI10.1109/TMTT.2017.2783377
ISSN0018-9480
Publisher versionhttp://ieeexplore.ieee.org/document/8241800/
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  • Departament de Teoria del Senyal i Comunicacions - Articles de revista [2.408]
  • CSC - Components and Systems for Communications Research Group - Articles de revista [68]
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