Nonlinear effects of SiO2 layers in bulk acoustic wave resonators
PublisherIEEE Microwave Theory and Techniques Society
Rights accessOpen Access
This paper presents the development of a comprehensive distributed circuit model to account for the existing nonlinear effects in bulk acoustic wave (BAW) resonators. The comprehensiveness of the model and its distributed implementation allow for the inclusion of the nonlinear effects occurring in any layer of the BAW configuration, not only the piezoelectric layer. The model has been applied to evaluate the nonlinear contribution of the piezoelectric layer and silicon dioxide (SiO₂) layer in the Bragg reflector. The nonlinear manifestations are a function of the frequency of the driving fundamental tones. Accurate measurements of state-of-the-art resonators validate the model proposed and confirm the contribution of the SiO₂ layer in the overall nonlinear performance.
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CitationCollado, J., Mateu, J., Garcia, D., Perea-Robles, R., Hueltes, A., Kreuzer, S., Aigner, R. Nonlinear effects of SiO2 layers in bulk acoustic wave resonators. "IEEE transactions on microwave theory and techniques", April 2018, vol. 66, núm. 4, p. 1773-1779.
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