Ir al contenido (pulsa Retorno)

Universitat Politècnica de Catalunya

    • Català
    • Castellano
    • English
    • LoginRegisterLog in (no UPC users)
  • mailContact Us
  • world English 
    • Català
    • Castellano
    • English
  • userLogin   
      LoginRegisterLog in (no UPC users)

UPCommons. Global access to UPC knowledge

Banner header
69.058 UPC E-Prints
You are here:
View Item 
  •   DSpace Home
  • E-prints
  • Grups de recerca
  • MNT - Grup de Recerca en Micro i Nanotecnologies
  • Articles de revista
  • View Item
  •   DSpace Home
  • E-prints
  • Grups de recerca
  • MNT - Grup de Recerca en Micro i Nanotecnologies
  • Articles de revista
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Second order sigma-delta control of charge trapping for MOS capacitors

Thumbnail
View/Open
MR_full-sent2.pdf (567,4Kb)
 
10.1016/j.microrel.2017.06.096
 
  View UPCommons Usage Statistics
  LA Referencia / Recolecta stats
Includes usage data since 2022
Cita com:
hdl:2117/115875

Show full item record
Bheesayagari, Chenna Reddy
Gorreta Mariné, Sergio
Pons Nin, JoanMés informacióMés informacióMés informació
Domínguez Pumar, ManuelMés informacióMés informacióMés informació
Document typeArticle
Defense date2017-09-01
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
This paper presents the circuit topology of a second order sigma-delta control of charge trapping for MOS capacitors. With this new topology it is possible to avoid the presence of plateaus that can be found in first-order sigma-delta modulators. Plateaus are unwanted phenomena in which the control is locked for a certain time interval (of unknown duration). In this case the control output is constant and therefore the controlled device is in fact in open-loop configuration. It is shown that the presence of plateaus is avoided in MOS capacitors using the proposed approach.
CitationBheesayagari, C., Gorreta, S., Pons, J., Dominguez, M. Second order sigma-delta control of charge trapping for MOS capacitors. "Microelectronics reliability", 1 Setembre 2017, vol. 76-77, p. 635-639. 
URIhttp://hdl.handle.net/2117/115875
DOI10.1016/j.microrel.2017.06.096
ISSN0026-2714
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0026271417302846?via%3Dihub
Collections
  • MNT - Grup de Recerca en Micro i Nanotecnologies - Articles de revista [346]
  • Departament de Teoria del Senyal i Comunicacions - Articles de revista [2.644]
  • Departament d'Enginyeria Electrònica - Articles de revista [1.860]
  View UPCommons Usage Statistics

Show full item record

FilesDescriptionSizeFormatView
MR_full-sent2.pdf567,4KbPDFView/Open

Browse

This CollectionBy Issue DateAuthorsOther contributionsTitlesSubjectsThis repositoryCommunities & CollectionsBy Issue DateAuthorsOther contributionsTitlesSubjects

© UPC Obrir en finestra nova . Servei de Biblioteques, Publicacions i Arxius

info.biblioteques@upc.edu

  • About This Repository
  • Metadata under:Metadata under CC0
  • Contact Us
  • Send Feedback
  • Privacy Settings
  • Inici de la pàgina